Power F-MOS FETs
2SK2383
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed
●High-speed switching
●Low ON-resistance
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 2mH, IL = 13A, 1 pulse
Symbol
V
V
I
D
I
DP
EAS
P
D
T
ch
T
stg
DSS
GSS
*
= 25°C)
C
Ratings
−55 to +150
500
±30
±13
±26
170
100
3
150
Unit
V
V
A
A
mJ
W
°C
°C
4.5
4.0
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
3.3±0.3
15.5±0.5
5˚
123
φ3.2±0.1
2.0 2.0 1.2 10.0
5.45±0.3
2.0
26.5±0.5
18.6±0.5
5.5±0.3
unit: mm
3.0±0.3
5˚ 5˚
23.4
5˚
5˚
5˚
0.7±0.1
1: Gate
2: Drain
3: Source
TOP-3E Package
22.0±0.5
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
= 25°C)
Conditions
VDS = 400V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 7A
VDS = 25V, ID = 7A
IDR = 13A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VDD = 150V, ID = 7A
VGS = 10V, RL = 21.4Ω
min
500
1
5
typ
0.45
8
1700
300
120
30
70
90
210
max
100
±1
5
0.6
−1.7
1.25
41.67
Unit
µA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
1
Power F-MOS FETs 2SK2383
Area of safe operation (ASO) PD Ta IAS L-load
100
I
DP
I
D
10
)
A
(
D
1
Drain current I
0.1
0.01
1 10 100 1000
Non repetitive pulse
=25˚C
T
C
DC
1ms
10ms
100ms
Drain to source voltage VDS (V
I
V
D
GS
10
VDS=25V
8
)
A
(
D
6
4
Drain current I
TC=150˚C
2
0
100˚C
07314625
Gate to source voltage VGS (V
t=100
0˚C
25˚C
µs
)
)
120
)
W
(
100
D
80
60
40
20
Allowable power dissipation P
0
020
(1) TC=Ta
(2) Without heat sink
=3W)
(P
D
(1)
(2)
40 60 80 100 120 140 160
Ambient temperature Ta (˚C
Vth T
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
0
0 25 50 75 100 125 150
C
Case temperature TC (˚C
VDS=25V
=1mA
I
D
)
100
30
)
A
(
10
3
1
Avalanche current IAS
0.3
0.1
0.1 10.3 3 10
)
L-load (mH
VDS V
50
)
V
(
40
DS
30
20
10
Drain to source voltage V
0
0 5 10 15 20 25 30
Gate to source voltage VGS (V
GS
)
TC=25˚C
170mJ
TC=25˚C
=26A
I
D
13A
6.5A
)
R
I
DS(on)
1.2
)
VGS=10V
Ω
(
1.0
DS(on)
0.8
0.6
0.4
0.2
Drain to source ON-resistance R
0
4 6 8 10121416
02
T
C
=150˚C
100˚C
Drain current ID (A
2
D
25˚C
0˚C
| Yfs | I
16
)
S
(
14
|
fs
12
10
8
6
4
2
Forward transfer admittance |Y
0
02
)
100˚C
4 6 8 10121416
Drain current ID (A
25˚C
D
VDS=25V
T
TC=0˚C
150˚C
=25˚C
C
)
,
)
Common source
(
, Output capacitance
)
Common source
(
Input capacitance
C
, C
, C
oss
rss
V
iss
10000
)
pF
(
rss
,C
1000
oss
,C
iss
C
)
100
Common source
(
10
Reverse transfer capacitance
1
0 40 80 120 160 200
Drain to source voltage VDS (V
DS
f=1MHz
=25˚C
T
C
C
C
C
iss
oss
rss
)