Panasonic 2SK2383 Datasheet

Power F-MOS FETs
2SK2383
Silicon N-Channel Power F-MOS FET
Features
Avalanche energy capacity guaranteed
High-speed switching
No secondary breakdown
Applications
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage Gate to Source voltage
Drain current
DC
Pulse Avalanche energy capacity Allowable power dissipation
TC = 25°C
Ta = 25°C Channel temperature Storage temperature
*
L = 2mH, IL = 13A, 1 pulse
Symbol
V V I
D
I
DP
EAS
P
D
T
ch
T
stg
DSS
GSS
*
= 25°C)
C
Ratings
55 to +150
500 ±30 ±13 ±26 170 100
3
150
Unit
V V A A
mJ
W
°C °C
4.5
4.0
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
3.3±0.3
15.5±0.5
123
φ3.2±0.1
2.0 2.0 1.2 10.0
5.45±0.3
2.0
26.5±0.5
18.6±0.5
5.5±0.3
unit: mm
3.0±0.3
23.4
0.7±0.1
1: Gate 2: Drain 3: Source
TOP-3E Package
22.0±0.5
Electrical Characteristics (T
Parameter
Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs | V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
= 25°C)
Conditions
VDS = 400V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 7A VDS = 25V, ID = 7A IDR = 13A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VDD = 150V, ID = 7A VGS = 10V, RL = 21.4
min
500
1
5
typ
0.45 8
1700
300 120
30 70 90
210
max
100
±1
5
0.6
1.7
1.25
41.67
Unit
µA µA
V V
S
V pF pF pF
ns ns ns
ns °C/W °C/W
1
Power F-MOS FETs 2SK2383
Area of safe operation (ASO) PD Ta IAS L-load
100
I
DP
I
D
10
) A
(
D
1
Drain current I
0.1
0.01 1 10 100 1000
Non repetitive pulse
=25˚C
T
C
DC
1ms
10ms
100ms
Drain to source voltage VDS (V
I
V
D
GS
10
VDS=25V
8
)
A
(
D
6
4
Drain current I
TC=150˚C
2
0
100˚C
07314625
Gate to source voltage VGS (V
t=100
0˚C 25˚C
µs
)
)
120
) W
(
100
D
80
60
40
20
Allowable power dissipation P
0
020
(1) TC=Ta (2) Without heat sink
=3W)
(P
D
(1)
(2)
40 60 80 100 120 140 160
Ambient temperature Ta (˚C
Vth T
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
0
0 25 50 75 100 125 150
C
Case temperature TC (˚C
VDS=25V
=1mA
I
D
)
100
30
) A
(
10
3
1
Avalanche current IAS
0.3
0.1
0.1 10.3 3 10
)
L-load (mH
VDS V
50
) V
(
40
DS
30
20
10
Drain to source voltage V
0
0 5 10 15 20 25 30
Gate to source voltage VGS (V
GS
)
TC=25˚C
170mJ
TC=25˚C
=26A
I
D
13A
6.5A
)
R
I
DS(on)
1.2
)
VGS=10V
(
1.0
DS(on)
0.8
0.6
0.4
0.2
Drain to source ON-resistance R
0
4 6 8 10121416
02
T
C
=150˚C
100˚C
Drain current ID (A
2
D
25˚C
0˚C
| Yfs |  I
16
) S
(
14
|
fs
12
10
8
6
4
2
Forward transfer admittance |Y
0
02
)
100˚C
4 6 8 10121416
Drain current ID (A
25˚C
D
VDS=25V T
TC=0˚C
150˚C
=25˚C
C
)
,
)
Common source
(
, Output capacitance
)
Common source
(
Input capacitance
C
, C
, C
oss
rss
V
iss
10000
)
pF
(
rss
,C
1000
oss
,C
iss
C
)
100
Common source
(
10
Reverse transfer capacitance
1
0 40 80 120 160 200
Drain to source voltage VDS (V
DS
f=1MHz
=25˚C
T
C
C C
C
iss
oss
rss
)
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