Panasonic 2SK2340 Datasheet

Power F-MOS FETs

2SK2340

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed

●High-speed switching

●Low ON-resistance

●No secondary breakdown

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

Drain current

DC

Pulse
Avalanche energy capacity
Allowable power
dissipation

TC = 25°C

Ta = 25°C
Channel temperature
Storage temperature

*

L = 3.6mH, IL = 5A, 1 pulse

Symbol

V
V
I

D

I

DP

EAS

P

D

T

ch

T

stg

DSS

GSS

*

= 25°C)

C

Ratings

−55 to +150

900
±30

±5

±10

45
50

2

150

Unit

V
V
A
A

mJ

W

°C
°C

φ3.2±0.1

15.0±0.313.7

–0.2

+0.5

8.0±0.2

4.1±0.2

Solder Dip

7

9.9±0.3

231

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

unit: mm

4.6±0.2

2.9±0.2

2.6±0.1

0.7±0.1

1: Gate
2: Drain
3: Source

TO-220E Package

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

f

t

d(off)

R

th(ch-c)

R

th(ch-a)

= 25°C)

Conditions

VDS = 720V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 3A
VDS = 25V, ID = 3A
IDR = 5A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VDD = 200V, ID = 3A
VGS = 10V, RL = 66.6Ω

min

900

2

1.5

typ

2

3.5

1400

140

60
30
60
60

170

max

100

±1

5

2.8

−1.6

2.5

62.5

Unit

µA
µA

V
V

Ω

S

V
pF
pF
pF

ns
ns
ns

ns
°C/W
°C/W

1

Power F-MOS FETs 2SK2340

Area of safe operation (ASO) PD  Ta IAS  L-load

100

I

DP

10

)

I

A

D

(

D

1

Non repetitive pulse

=25˚C

T

C

t=100ms

1ms

10ms

60

)
W

(

50

D

40

30

(1) TC=Ta
(2) Without heat sink

=2W)

(P

D

(1)

100

30

)
A

(

10

3

TC=25˚C

45mJ

Drain current I

0.1

0.01
1 10 100 1000

Drain to source voltage VDS (V

I

 V

D

GS

10

8

)
A

(

D

6

4

Drain current I

2

0

01234567

Gate to source voltage VGS (V

DC

VDS=25V

=25˚C

T

C

20

10

Allowable power dissipation P

0

020

)

)

Ambient temperature Ta (˚C

6

)

5

V

(

th

4

3

2

1

Gate threshold voltage V

0

0 25 50 75 100 125 150

Case temperature TC (˚C

(2)

40 60 80 100 120 140 160

)

Vth  T

C

VDS=25V

=1mA

I

D

)

1

Avalanche current IAS

0.3

0.1

0.1 10.3 3 10

L-load (mH

VDS  V

50

)
V

(

40

DS

30

20

10

)

GS

Drain to source voltage V

0

0 5 10 15 20 25 30

Gate to source voltage VGS (V

TC=25˚C

ID=10A

5A

2.5A

)

R

 I

DS(on)

6

)

Ω

(

5

DS(on)

4

3

V

=10V

2

1

Drain to source ON-resistance R

0

0108264

GS

15V

Drain current ID (A

2

D

TC=25˚C

)

| Yfs |  I

6

)
S

(

5

|

fs

4

3

2

1

D

Forward transfer admittance |Y

0

24681357

0

Drain current ID (A

VDS=25V
T

=25˚C

C

)

C

, C

, C

iss

oss

10000

)

,

)

pF

(

rss

,C

Common source

(

1000

oss

,C

iss

C

)

100

, Output capacitance

)

Common source

(

Common source

(

10

Input capacitance

Reverse transfer capacitance

1

0 40 80 120 160 200

Drain to source voltage VDS (V

rss

 V

DS

f=1MHz

=25˚C

T

C

C
C

C

iss

oss

rss

)