Panasonic 2SK2339 Datasheet

Power F-MOS FETs 2SK2339

G

S

D

2SK2339

Silicon N-Channel Power F-MOS

■ Features

●

Avalanche energy capability guaranteed

●

Low ON-resistance

●

No secondary breakdown

●

Low-voltage drive

■ Applications

●

Non-contact relay

●

Solenoid drive

●

Motor drive

●

Control equipment

●

Switching mode regulator

■ Absolute Maximum Ratings (Tc = 25˚C)

Parameter
Drain-Source breakdown voltage
Gate-Source voltage

Drain current

DC
Pulse

Avalanche energy capability

T

Allowable power
dissipation

C

Ta= 25˚C
Channel temperature
Storage temperature

* L= 5mH, IL= 5A, 1 pulse

= 25˚C

Symbol

V

DSS

V

GSS

I

D

I

DP

*

EAS

P

D

T

ch

T

stg

Rating
80±10

±15
±10
±20

62.5
30

1.3

150

–55 to +150

Unit

V
V
A
A

mJ

W

˚C
˚C

8.5±0.2

6.0±0.5

10.0±0.310.5min.

1.5max.

2.0 1.5±0.1

0.8±0.1

2.54±0.3

5.08±0.5
213

■ Equivalent Circuit

Unit : mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1 : Gate
2 : Collector
3 : Emitter

N Type Package

■ Electrical Characteristics (Tc = 25˚C)

Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage

Drain-Source ON-resistance

Forward transadmittance
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

R

DS(on)

|

| Y

fs

V

DSF

t

rr

Q

rr

C

iss

C

oss

C

rss

t

on

t

f

t

d(off)

R

th(ch-c)

R

th(ch-a)

1
2

V
V
I

D

V
V
V
V
I

DR

L=230µ H, V
I

DR

V

V
V

Condition

= 70V, VGS= 0

DS

= 0, VGS=15V

DS

=1mA, VGS= 0

=10V, ID=1mA

DS

=10V, ID= 5A

GS

= 4V, ID= 5A

GS

=10V, ID= 5A

DS

=10A, VGS= 0

= 30V, VGS= 0

DD

=10A, di/dt= 80A/µ s

=10V , VGS= 0, f= 1MHz

DS

= 30V, ID= 5A

DD

=10V, RL= 6Ω

GS

Min

70

1

3

Typ

150
230

5.5

0.55

2.2
85

250

20

0.5

0.9

1.9

Max

10

±10

90

2.5
230
370

–1.8

4.2

96

Unit

µA
µA

V
V

mΩ
mΩ

S

V
µs
µs
pF
pF
pF
µs
µs
µs

˚C/W
˚C/W

Power F-MOS FETs 2SK2339

Area of safe operation (ASO)

100

30

I

DP

I

)

D

10

A

(

D

3

t=10ms

1

Drain current I

0.3

0.1
1

Drain-Source voltage V

14

12

10

)
A

(

D

8

6

Drain current I

4

2

0

V

024681012

Drain-Source voltage V

Non repetitive pulse
T

t=100ms

105503 30 100

I

D –VDS

=10V

GS

5V

PD=30W

=25˚C

C

DC

4.5V

DS

4V

DS

t=100ms

t=1ms

(V)

Ta=25˚C

3.5V

(V)

PD – Ta

60

)

50

W

(

D

40

30

20

Allowable power dissipation P

10

0

18

16

14

)
A

12

(

D

10

8

6

Drain current I

4

3V

2

0

40 80 120 16020 60 100 140

0

Ambient temperature Ta (˚C

246 108

0

Gate-Source voltage V

(1) TC=Ta
(2) Without heat sink
(P

(1)

(2)

ID – V

GS

=1.3W)

D

GS

)

TC=25˚C

(V)

100

50
30

20

)
A

(

10

AS

5
3

2

1

Abalanche current I

0.5

0.3

0.2

0.1

0.1

6

5

)
V

(

th

4

3

2

Gate threshold voltage V

1

0

IAS – L-load

TC=25˚C

62.5mJ

1100.5 50.3 3

– T

C

)

C

VDS=10V
I

=1mA

D

(˚C)

L-load L (mH

V

th

0 25 50 75 100 125 150

Case temperature T

R

600

)

Ω

500

(

DS(on)

400

300

200

100

Drain-Source ON-resistance R

0

024681012

Drain current I

DS(on)

(1)

(2)

– I

D

D

(1)VGS=4V
(2)V

GS

T

=25˚C

C

(A)

=10V

R

600

)
mΩ

(

500

(on)

DS

400

300

200

100

Drain-Source ON-resistance R

0

2468

010

Gate-Source voltage V

DS(on)

=5AID=2.5A

I

D

– V

GS

TC=25˚C

(V

GS

7

VDS=10V
Ta=25˚C

6

)
S

(
|

5

fs

4

3

2

Forward transadmittance | Y

1

0

010

)

| Yfs | – I

Drain current I

D

864212

(A)

D