Panasonic 2SK2211 Datasheet

Silicon MOS FETs (Small Signal)

D

S

G

2SK2211

Silicon N-Channel MOS FET

For switching

Unit : mm

1.5

4.5

±0.1

1.6

±0.2

±0.1

■ Features

• Low ON-resistance R

DS(ON)

±0.1

2.6

45˚

+0.25

0.4 max.

4.0

–0.20

• High-speed switching

0.4

• Mini-power type package, allowing downsizing of the sets and

automatic insertion through the tape/magazine packing.

■ Absolute Maximum Ratings Ta = 25°C

±0.08

0.5

±0.08

1.5

±0.1

321

–0.2

+0.1

1.0

3.0

±0.15

0.4

Parameter Symbol Ratings Unit

Drain to Source voltage V
Gate to Source voltage V
Drain current I
Max drain current I
Allowable power dissipation

*

Channel temperature P
Storage temperature T

DS

GSO

D

PD

P

D

ch

−55 to +150 °C

stg

30 V

±20 V

±1A
±2A

1W

150 °C

Marking Symbol: 2M
Internal Connection

marking

1: Gate
2: Drain
3: Source

Mini-Power Type Package (3-pin)

Note) * PC board: Copper foil of the drain portion should have a area of

1 cm2 or more and the board thickness should be 1.7 mm.

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Drain to Source cut-off current I
Gate to Source leakage current I
Drain to Source breakdown voltage V
Gate to Source voltage V
Gate threshold voltage V
Drain to Source ON-resistance

*

R

DS(ON)1

R

DS(ON)2

DSS

GSS

DSS

GSS

th

Forward transfer admittance Yfs VDS = 10 V, ID = 0.5 A 0.5 S
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time t
Fall time t
Turn-off time (delay time) t

C

iss

C

oss

C

rss

ON

f

OFF

Note) *: Pulse measurement

VDS = 25 V, VGS = 010µA
VGS = ±15 V, VDS = 0 ±10 µA
ID = 0.1 mA, VGS = 030 V
IGS = 0.1 mA, VDS = 0 ±20 V
VDS = 5 V, ID = 1 mA 0.8 2 V
VGS = 4 V, ID = 0.5 A 0.48 0.75 Ω
VGS = 10 V, ID = 0.5 A 0.35 0.6 Ω

VDS = 10 V, VGS = 0, f = 1 MHz 87 pF

69 pF

23 pF
VGS = 10 V, ID = 0.5 A, VDD = 10 V 12 ns
RL = 10 Ω 160 ns

60 ns

±0.04

±0.1

2.5

1

2SK2211 Silicon MOS FETs (Small Signal)

ID  V

3.0

2.5

)
A

(

2.0

D

1.5

1.0

Drain current I

0.5

0

012108264

DS

Drain to source voltage VDS (V

1.4

RDS  I

)

Ω

(

1.2

DS(ON)

1.0

0.8

0.6

0.4

0.2

Drain to source ON-resistance R

0

0 2.52.00.5 1.51.0

D

Ta = 25°C

VGS = 4 V

10 V

Drain current ID (A

Ta = 25°C

VGS = 3.5 V

3.0 V

2.5 V

2.0 V

)

ID  V

3.0

2.5

)
A

(

2.0

D

1.5

1.0

Drain current I

0.5

0

0654132

)

Gate to source voltage VGS (V

Yfs  I

1.6

)

1.4

S

(
|

fs

1.2

1.0

0.8

0.6

0.4

0.2

Forward transfer admittance |Y

0

0 2.52.00.5 1.51.0

Drain current ID (A

DS

VDS =10 V
T

D

VDS = 10 V
f = 1 kHz
T

a

= 25°C

a

= 25°C

)

)

1.6

)

Ω

(

1.4

1.2

DS(ON)

1.0

0.8

0.6

0.4

0.2

Drain to source ON-resistance R

0

012108264

140

)
pF

,

)

(

120

rss

,C

oss

Common source

(

100

,C

iss

C

)

80

, Output capacitance

)

60

Common source

(

40

Common source

(

20

Input capacitance

Reverse transfer capacitance

0

0.3 101303 100 300

RDS  V

DS

ID = 0.5 A

= 25°C

T

a

Gate to source voltage VGS (V

C

, C

, C

oss

rss

 V

C

iss

C

oss

C

rss

DS

f = 1 MHz

= 25°C

T

a

iss

Drain to source voltage VDS (V

)

)

2