Panasonic 2SK2129 Datasheet

Power F-MOS FETs

2SK2129

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed: EAS > 20mJ

●V

= ±30V guaranteed

GSS

●High-speed switching: t

●No secondary breakdown

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

Drain current

Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature

*

L = 4.5mH, IL = 3A, VDD = 50V, 1 pulse

= 50ns

f

DC
Pulse

TC = 25°C
Ta = 25°C

Symbol

V

DSS

V

GSS

I

D

I

DP

*

EAS

P

D

T

ch

T

stg

= 25°C)

C

Ratings

−55 to +150

800
±30

±3
±6
20
50

2

150

Unit

V
V
A
A

mJ

W

°C
°C

φ3.2±0.1

15.0±0.313.7

–0.2

+0.5

8.0±0.2

4.1±0.2

Solder Dip

7

9.9±0.3

231

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

unit: mm

4.6±0.2

2.9±0.2

2.6±0.1

0.7±0.1

1: Gate
2: Drain
3: Source

TO-220E Package

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

f

t

d(off)

R

th(ch-c)

= 25°C)

Conditions

VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
IDR = 3A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VGS = 10V, ID = 2A
VDD = 200V, RL = 100Ω

min

800

2

1.5

typ

3.2

2.4

730

90
40
35
60
50

160

max

0.1
±1

5
4

−1.6

2.5

Unit

mA

µA

V
V

Ω

S

V
pF
pF
pF

ns
ns
ns
ns

°C/W

1

Power F-MOS FETs 2SK2129

Area of safe operation (ASO) PD  Ta EAS  T

100

10

)

I

DP

A

(

I

D

D

1

Drain current I

0.1

0.01
1 10 100 1000

Non repetitive pulse

=25˚C

T

C

1ms

10ms

DC

Drain to source voltage VDS (V

ID  V

DS

4

VGS=15V

10V

6V

3

)
A

(

D

2

Drain current I

1

0

0 102030405060

5.5V

5V

4.5V

Drain to source voltage VDS (V

t=100µs

T

=25˚C

C

50W

4V

)

)

60

)
W

(

50

D

40

30

20

10

Allowable power dissipation P

0

020

(1) TC=Ta
(2) Without heat sink

=2W)

(P

D

(1)

(2)

40 60 80 100 120 140 160

Ambient temperature Ta (˚C

ID  V

GS

5

4

)
A

(

D

3

2

TC=0˚C 150˚C

25˚C

100˚C

Drain current I

1

0

012108264

Gate to source voltage VGS (V

VDS=25V

30

)
mJ

(

25

20

15

10

5

Avalanche energy capacity EAS

0

25 50

)

)

Junction temperature Tj (˚C

6

)

5

V

(

th

4

3

2

1

Gate threshold voltage V

0

0 25 50 75 100 125 150

Case temperature TC (˚C

j

VDD=50V
I

=3A

D

75 100 125 150 175

)

Vth  T

C

VDS=25V

=1mA

I

D

)

VDS  V

80

70

)

V

(

60

DS

50

40

30

20

Drain to source voltage V

10

0.75A

0

0 5 10 15 20 25 30

Gate to source voltage VGS (V

2

GS

TC=25˚C

ID=6A

3A

1.5A

12

)

Ω

(

10

DS(on)

8

6

4

2

Drain to source ON-resistance R

0

012345

)

Drain current ID (A

R

DS(on)

 I

D

VGS=10V

T

=150˚C

C

100˚C

)

25˚C

0˚C

| Yfs |  I

3.0
VDS=25V

)
S

T

=25˚C

(

C

2.5

|

fs

2.0

1.5

1.0

0.5

D

Forward transfer admittance |Y

0

012345

Drain current ID (A

)