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Power F-MOS FETs
2SK2125
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed: EAS > 15.6mJ
●V
= ±30V guaranteed
GSS
●High-speed switching: t
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse
= 35ns
f
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
*
EAS
P
D
T
ch
T
stg
= 25°C)
C
Ratings
±2.5
15.6
−55 to +150
500
±30
±10
40
2
150
Unit
V
V
A
A
mJ
W
°C
°C
φ3.2±0.1
15.0±0.313.7
–0.2
+0.5
8.0±0.2
4.1±0.2
Solder Dip
7
9.9±0.3
231
3.0±0.2
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
unit: mm
4.6±0.2
2.9±0.2
2.6±0.1
0.7±0.1
1: Gate
2: Drain
3: Source
TO-220E Package
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
= 25°C)
Conditions
VDS = 400V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 1.5A
VDS = 25V, ID = 1.5A
IDR = 2.5A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 1.5A
VDD = 150V, RL = 100Ω
min
500
2
1
typ
3.2
1.5
330
55
20
15
25
30
55
max
0.1
±1
5
4
−1.5
3.125
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
1
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Power F-MOS FETs 2SK2125
Area of safe operation (ASO) PD Ta EAS T
10
I
DP
)
A
I
(
3
D
D
1
0.3
Drain current I
0.1
Non repetitive pulse
=25˚C
T
C
10ms
100ms
100µs
DC
30 30010 100
Drain to source voltage VDS (V
ID V
DS
4.0
3.5
VGS=10V
7V
3.0
)
A
(
2.5
D
2.0
1.5
Drain current I
1.0
0.5
0
6.5V
6V
5.5V
0 102030405060
Drain to source voltage VDS (V
t=10µs
1ms
T
C
40W
=25˚C
5V
50
)
W
(
40
D
30
20
10
Allowable power dissipation P
0
020
)
Ambient temperature Ta (˚C
5
4
)
A
(
D
3
2
Drain current I
1
0
012108264
)
Gate to source voltage VGS (V
(1) TC=Ta
(2) Without heat sink
(P
=2W)
D
(1)
(2)
40 60 80 100 120 140 160
)
ID V
GS
VDS=25V
TC=0˚C
150˚C
100˚C25˚C
)
24
)
mJ
(
20
16
12
8
4
Avalanche energy capacity EAS
0
25 50
Junction temperature Tj (˚C
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
0
0 25 50 75 100 125 150
Case temperature TC (˚C
j
VDD=50V
I
=2.5A
D
75 100 125 150 175
)
Vth T
C
VDS=25V
=1mA
I
D
)
R
I
DS(on)
12
)
Ω
(
10
DS(on)
8
6
4
2
Drain to source ON-resistance R
0
012345
T
C
100˚C
25˚C
=150˚C
0˚C
Drain current ID (A
2
D
VGS=10V
| Yfs | I
3.0
)
S
(
2.5
|
fs
2.0
1.5
1.0
0.5
D
VDS=25V
T
=25˚C
C
100
)
A
(
10
DR
1
0.1
Drain reverse current I
IDR V
DSF
VGS=0
=25˚C
T
C
Forward transfer admittance |Y
0
012345
)
Drain current ID (A
)
0.01
0 0.5 1.0 1.5 2.0
Diode forward voltage V
DSF
(V
)