Panasonic 2SK123 User Manual

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Silicon Junction FETs (Small Signal)

2SK123

Silicon N-Channel Junction FET

For impedance conversion in low frequency
For electret capacitor microphone

■ Features

●High mutual conductance g

●Low noise voltage of NV

m

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature

Symbol

V

DSO

V

DGO

I

DSO

I

DGO

I

GSO

P

D

T

opr

T

stg

Ratings

20
20

2
2
2

200

−20 to +80

−55 to +150

Unit

V

V
mA
mA
mA

mW

°C
°C

unit: mm

+0.2

5.8

−0.3
+0.25

1.5

2.4±0.1 1.9±0.1

+0.1

−0.05

0.4

0.95

1.9±0.2

0.95

+0.1

−0.05

0.4

−0.05

1

3

2

Mini Flat Package (3-pin)

+0.1

−0.05

0.4

+0.1

−0.06

0.16

1.45

+0.2

+0.2

−0.1

0.8

1.1

1: Drain
2: Source
3: Gate

−0.05

2.9

Marking Symbol: 1H

Note: For the forming type, (Y) is indicated after the part No.

■ Electrical Characteristics (Ta = 25°C)

Parameter

Current consumption
Drain to Source cut-off current
Mutual conductance

Noise figure

Voltage gain

Voltage gain difference

Symbol

I

D

I

DSS

g

m

NV

G

V1

G

V2

G

V3

∆|GV2 − GV1|
∆|GV1 − GV3|

VD = 4.5V, CO = 10pF, RD = 2.2kΩ ± 1%
VDS = 4.5V, VGS = 0
VD = 4.5V, VGS = 0, f = 1kHz
VD = 4.5V, RD = 2.2kΩ ± 1%
CO = 10pF, A-curve
VD = 4.5V, RD = 2.2kΩ ± 1%
CO = 10pF, eG = 10mV, f = 1kHz
VD = 12V, RD = 2.2kΩ ± 1%
CO = 10pF, eG = 10mV, f = 1kHz
VD = 1.5V, RD = 2.2kΩ ± 1%
CO = 10pF, eG = 10mV, f = 1kHz

Conditions

min

100

95

0.7

−3

0

−4.5

0
0

typ

1.6

2

3.3

− 0.3

max

600
480

4

+3.5
+3.5

Unit

µA
µA

mS

µV

dB

dB

dB

dB
dB

1

Silicon Junction FETs (Small Signal)

2SK123

PD  Ta ID  V

240

)

mW

(

200

D

160

120

80

40

Allowable power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

2.0
V

=4.5V

DS

f=1kHz
Ta=25˚C

)

1.6

mS

(

m

1.2

0.8

max.

opr

T

gm  V

I

DSS

GS

=0.3mA

DS

0.40

0.35

)

0.30

mA

(

0.25

D

0.20

0.15

Drain current I

0.10

0.05

0

012108264

)

Drain to source voltage VDS (V

gm  I

2.0

)

1.6

mS

(

m

1.2

0.8

I

DSS

=0.3mA

VGS=0V

– 0.05V

– 0.10V

– 0.15V

– 0.20V

D

Ta=25˚C

V

=4.5V

DS

f=1kHz
Ta=25˚C

)

600

500

)
µA

(

400

D

300

200

Drain current I

100

0

– 0.5 0– 0.1– 0.4 – 0.2– 0.3

Gate to source voltage VGS (V

ID  V

25˚C

GS

Ta=75˚C

=4.5V

V

DS

–25˚C

)

0.4

Mutual conductance g

0
–1.0 0– 0.2– 0.8 – 0.4– 0.6

Gate to source voltage VGS (V

0.15mA

0.4

Mutual conductance g

)

0

0 0.50.40.1 0.30.2

Drain current ID (mA

)

2