Panasonic 2SK1228 Datasheet

Silicon MOS FETs (Small Signal)

2SK1228

Silicon N-Channel MOS FET

For switching

■ Features

●High-speed switching

●Wide frequency band

●Incorporating a built-in gate protection-diode

●Allowing 2.5V drive

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature

Symbol

V

DS

V

GSO

I

D

I

DP

P

D

T

ch

T

stg

Ratings

50
10

50
100
150
150

−55 to +150

■ Electrical Characteristics (Ta = 25°C)

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time

1

*

Pulse measurement

2

*

ton, t

measurement circuit

off

V

out

470Ω

= 2.5V

V

GS

50Ω

100µF

V

DD

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
C

iss

C

oss

C

rss

t

on

t

off

= 5V

VDS = 20V, VGS = 0
VGS = 10V, VDS = 0
ID = 10µA, VGS = 0
ID = 100µA, VDS = 5V

1

*

ID = 10mA, VGS = 2.5V
ID = 10mA, VDS = 5V, f = 1kHz

VDS = 5V, VGS = 0, f = 1MHz

2

*

VDD = 5V, VGS = 0 to 2.5V, RL = 470Ω

2

*

VDD = 5V, VGS = 2.5 to 0V, RL = 470Ω

V

in

V

out

Unit

mA
mA

mW

Conditions

90%

10%

°C
°C

V
V

10%
90%

+0.2

2.8

–0.3
+0.25

1.5

0.65±0.15 0.65±0.15

1

0.950.95

+0.2

–0.05

2.9

1.9±0.2

2

+0.2

–0.1

0.8

1.1

0.1 to 0.3

0.4±0.2

1: Gate JEDEC: TO-236
2: Source EIAJ: SC-59
3: Drain Mini Type Package (3-pin)

–0.05

unit: mm

1.45

3

+0.1

+0.1

0 to 0.1

Marking Symbol: 4V

min

50

0.5

20

typ

100

0.8
27
39

4.5

4.1

1.2

0.2

0.2

max

1
1

1.1
50

Unit

–0.05

0.4

–0.06

0.16

µA
µA

V
V

Ω

mS

pF
pF
pF

µs
µs

t

ontoff

1

Silicon MOS FETs (Small Signal)

2SK1228

PD  Ta ID  V

240

)
mW

(

200

D

160

120

80

40

Allowable power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

C

, C

, C

iss

oss

rss

12

)

,

)

pF

(

10

rss

,C

Common source

(

oss

,C

8

iss

C

)

6

, Output capacitance

)

Common source

(

4

Common source

(

2

Input capacitance

Reverse transfer capacitance

0

1 10 100 10003 30 300

Drain to source voltage VDS (V

 V

C

oss

C

iss

C

rss

DS

DS

48

40

Ta=25˚C

)
mA

(

32

D

24

16

Drain current I

8

0

012108264

)

Drain to source voltage VDS (V

ID  V

120

100

)
mA

(

80

D

60

40

GS

VGS=1.8V

1.6V

1.4V

1.2V

1.0V

V

DS

Ta=–25˚C

25˚C

75˚C

)

=5V

60

)
mS

(

50

|

fs

40

30

20

10

Forward transfer admittance |Y

0

120

)

Ω

(

100

DS(on)

80

60

40

Drain current I

20

0

0654132

)

Gate to source voltage VGS (V

)

20

Drain to source ON-resistance R

0

| Yfs |  V

0654132

GS

VDS=5V
f=1kHz
Ta=25˚C

Gate to source voltage VGS (V

R

 V

DS(on)

0654132

GS

ID=10mA

Ta=75˚C

25˚C

–25˚C

Gate to source voltage VGS (V

)

)

VIN  I

100

30

)

10

V

(

IN

3

1

0.3

Input voltage V

0.1

0.03

0.01

0.1 1 10 1000.3 3 30

Output current IO (mA

2

O

VO=5V
Ta=25˚C

)