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Silicon Junction FETs (Small Signal)
2SK1103
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ163
■ Features
●Low ON-resistance
●Low-noise characteristics
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
−65
20
10
150
150
−55 to +150
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
*
I
DSS
I
GSS
V
GDS
V
GSC
| Yfs |
R
DS(on)
C
iss
C
rss
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
IG = −10µA, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 1mA, f = 1kHz
VDS = 10mV, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
Unit
V
mA
mA
mW
°C
°C
Conditions
+0.2
2.8
–0.3
+0.25
1.5
0.65±0.15 0.65±0.15
1
0.950.95
+0.2
–0.05
2.9
1.9±0.2
2
+0.2
–0.1
0.8
1.1
0.1 to 0.3
0.4±0.2
1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini Type Package (3-pin)
–0.05
unit: mm
1.45
3
+0.1
+0.1
0 to 0.1
Marking Symbol (Example): 4L
min
0.2
−65
1.8
typ
−1.5
2.5
300
7
1.5
max
6
−10
−3.5
Unit
mA
mS
–0.05
0.4
–0.06
0.16
nA
V
V
Ω
pF
pF
*
I
rank classification
DSS
Runk
I
(mA)
DSS
Marking Symbol
O
0.2 to 1
4LO
P
0.6 to 1.5
4LP
Q
1 to 3
4LQ
R
2.5 to 6
4LR
1
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Silicon Junction FETs (Small Signal)
2SK1103
PD Ta ID V
320
)
280
mW
(
D
240
200
160
120
80
40
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
| Yfs | V
5
)
mS
(
|
4
fs
3
2
1
Forward transfer admittance |Y
0
–1.6 0–1.2 – 0.4– 0.8
Gate to source voltage VGS (V
I
DSS
GS
=10mA
VDS=10V
Ta=25˚C
DS
2.5
2.0
)
mA
(
1.5
D
1.0
Drain current I
0.5
0
0654132
)
Drain to source voltage VDS (V
| Yfs | I
2.5
)
mS
(
|
2.0
fs
I
=10mA
DSS
1.5
1.0
0.5
Forward transfer admittance |Y
0
082647153
)
Drain current ID (mA
Ta=25˚C
=0V
V
GS
– 0.1V
– 0.2V
– 0.3V
– 0.4V
)
D
V
=10V
DS
Ta=25˚C
)
2.5
2.0
)
mA
(
1.5
D
1.0
Drain current I
0.5
0
–1.2 0– 0.2– 0.4–1.0 – 0.6– 0.8
Gate to source voltage VGS (V
10
)
,
)
pF
(
rss
8
,C
Common source
(
oss
,C
iss
6
C
)
, Output capacitance
)
4
Common source
(
Common source
(
2
Input capacitance
Reverse transfer capacitance
0
1 3 10 30 100
Drain to source voltage VDS (V
ID V
GS
Ta=–25˚C
25˚C
75˚C
)
C
, C
, C
oss
rss
C
C
C
V
iss
oss
rss
DS
VGS=0
f=1MHz
Ta=25˚C
iss
)
2