Panasonic 2SK1103 Datasheet

Silicon Junction FETs (Small Signal)

2SK1103

Silicon N-Channel Junction FET

For switching
Complementary to 2SJ163

■ Features

●Low ON-resistance

●Low-noise characteristics

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature

Symbol

V

GDS

I

D

I

G

P

D

T

ch

T

stg

Ratings

−65

20

10
150
150

−55 to +150

■ Electrical Characteristics (Ta = 25°C)

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)

Symbol

*

I

DSS

I

GSS

V

GDS

V

GSC

| Yfs |
R

DS(on)

C

iss

C

rss

VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
IG = −10µA, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 1mA, f = 1kHz
VDS = 10mV, VGS = 0

VDS = 10V, VGS = 0, f = 1MHz

Unit

V
mA
mA

mW

°C
°C

Conditions

+0.2

2.8

–0.3
+0.25

1.5

0.65±0.15 0.65±0.15

1

0.950.95

+0.2

–0.05

2.9

1.9±0.2

2

+0.2

–0.1

0.8

1.1

0.1 to 0.3

0.4±0.2

1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini Type Package (3-pin)

–0.05

unit: mm

1.45

3

+0.1

+0.1

0 to 0.1

Marking Symbol (Example): 4L

min

0.2

−65

1.8

typ

−1.5

2.5

300

7

1.5

max

6

−10

−3.5

Unit

mA

mS

–0.05

0.4

–0.06

0.16

nA

V
V

Ω

pF
pF

*

I

rank classification

DSS

Runk

I

(mA)

DSS

Marking Symbol

O

0.2 to 1
4LO

P

0.6 to 1.5
4LP

Q

1 to 3

4LQ

R

2.5 to 6
4LR

1

Silicon Junction FETs (Small Signal)

2SK1103

PD  Ta ID  V

320

)

280

mW

(

D

240

200

160

120

80

40

Allowable power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

| Yfs |  V

5

)

mS

(

|

4

fs

3

2

1

Forward transfer admittance |Y

0
–1.6 0–1.2 – 0.4– 0.8

Gate to source voltage VGS (V

I

DSS

GS

=10mA

VDS=10V
Ta=25˚C

DS

2.5

2.0

)
mA

(

1.5

D

1.0

Drain current I

0.5

0

0654132

)

Drain to source voltage VDS (V

| Yfs |  I

2.5

)
mS

(
|

2.0

fs

I

=10mA

DSS

1.5

1.0

0.5

Forward transfer admittance |Y

0

082647153

)

Drain current ID (mA

Ta=25˚C

=0V

V

GS

– 0.1V

– 0.2V

– 0.3V
– 0.4V

)

D

V

=10V

DS

Ta=25˚C

)

2.5

2.0

)
mA

(

1.5

D

1.0

Drain current I

0.5

0
–1.2 0– 0.2– 0.4–1.0 – 0.6– 0.8

Gate to source voltage VGS (V

10

)

,

)

pF

(

rss

8

,C

Common source

(

oss

,C

iss

6

C

)

, Output capacitance

)

4

Common source

(

Common source

(

2

Input capacitance

Reverse transfer capacitance

0

1 3 10 30 100

Drain to source voltage VDS (V

ID  V

GS

Ta=–25˚C

25˚C

75˚C

)

C

, C

, C

oss

rss

C

C
C

 V

iss

oss
rss

DS

VGS=0
f=1MHz
Ta=25˚C

iss

)

2