Panasonic 2SK0665 Datasheet
Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
■ Features
●High-speed switching
●Small drive current owing to high input inpedance
●High electrostatic breakdown voltage
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
20
8
100
200
150
150
−55 to +150
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Turn-on time
Turn-off time
1
*
Resistance ratio R1/R2 = 1/50
V
out
200Ω
= 5V
V
GS
50Ω
100µF
V
*
DD
Symbol
I
DSS
I
GSS
V
DSS
V
th
3
*
R
DS(on)
| Yfs |
V
OH
V
SL
1
*
R1 + R
2
2
*
t
on
2
*
t
off
2
ton, t
measurement circuit
off
= 5V
V
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VGS = 0
ID = 100µA, VDS = V
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
VDD = 5V, VGS = 1V, RL = 200Ω
VDD = 5V, VGS = 5V, RL = 200Ω
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
V
in
out
Unit
mA
mA
mW
°C
°C
Conditions
3
*
Pulse measurement
90%
10%
V
V
GS
10%
90%
unit: mm
2.1±0.1
1.25±0.1 0.4250.425
1
1.3±0.10.9±0.1
2.0±0.2
0.650.2 0.65
2
0.7±0.1
0.2±0.1
0 to 0.1
1: Gate
2: Source EIAJ: SC-70
3: Drain S-Mini Type Package (3-pin)
+0.1
3
+0.1
Marking Symbol: 3O
Internal Connection
D
R
G
min
40
20
1.5
20
4.5
100
1
R
2
S
typ Unit
max
10
80
3.5
50
1
200
1
1
–0
0.3
–0.05
0.15
µA
µA
V
V
Ω
mS
V
V
kΩ
µs
µs
t
ontoff
1
Silicon MOS FETs (Small Signal)
2SK665
PD Ta ID V
240
)
mW
(
200
D
160
120
80
40
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
| Yfs | V
50
)
mS
(
|
40
fs
30
20
10
Forward transfer admittance |Y
0
0108264
Gate to source voltage VGS (V
GS
VDS=5V
Ta=25˚C
)
,
)
Common source
(
Input capacitance
)
DS
120
100
)
mA
(
80
D
60
40
Drain current I
20
0
0108264
Drain to source voltage VDS (V
C
, C
V
iss
oss
12
)
pF
(
oss
10
,C
iss
C
)
8
6
Common source
(
4
2
Output capacitance
0
0.1 1 10 1000.3 3 30
Drain to source voltage VDS (V
Ta=25˚C
VGS=6.0V
DS
VGS=0
f=1MHz
Ta=25˚C
C
iss
C
oss
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
120
100
)
mA
(
80
D
60
40
Drain current I
20
0
0108264
)
)
Gate to source voltage VGS (V
120
)
Ω
(
100
DS(on)
80
60
40
20
Drain to source ON-resistance R
0
0108264
Gate to source voltage VGS (V
ID V
R
DS(on)
GS
V
VDS=5V
Ta=–25˚C
25˚C
75˚C
GS
I
=20mA
D
Ta=75˚C
)
25˚C
–25˚C
)
VIN I
1000
300
)
100
V
(
IN
30
10
3
Input voltage V
1
0.3
0.1
0.1 1 10 1000.3 3 30
Output current IO (mA
2
O
VO=1V
Ta=25˚C
)
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