Panasonic 2SK0662 Datasheet
Silicon Junction FETs (Small Signal)
2SK662
Silicon N-Channel Junction FET
For low-frequency amplification
■ Features
●High mutual conductance g
●Low noise type
●S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
m
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
j
T
stg
Ratings
30
−30
20
10
150
125
−55 to +125
Unit
V
V
mA
mA
mW
°C
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
*
I
DSS
I
GSS
V
GSC
g
m
C
iss
C
rss
NV
Conditions
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 0.5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 30V, ID = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
unit: mm
2.1±0.1
1.25±0.1 0.4250.425
–0
1
1.3±0.10.9±0.1
2.0±0.2
0.650.2 0.65
2
0.7±0.1
0.2±0.1
0 to 0.1
1: Source
2: Drain EIAJ: SC-70
3: Gate S-Mini Type Package (3-pin)
+0.1
0.3
3
–0.05
+0.1
0.15
Marking Symbol (Example): 1O
min
0.5
− 0.1
4
4
typ
14
3.5
60
max
12
−100
−1.5
Unit
mA
nA
mS
pF
pF
mV
V
*
I
rank classification
DSS
Runk
I
(mA)
DSS
Marking Symbol
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
1
Silicon Junction FETs (Small Signal)
2SK662
PD Ta ID V
240
)
mW
(
200
D
160
120
80
40
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
gm V
GS
20
VDS=10V
Ta=25˚C
)
16
mS
(
m
12
C
iss
ID V
Ta=75˚C
25˚C
, C
V
oss
GS
–25˚C
DS
=10V
V
DS
VGS=–3V
f=1MHz
Ta=25˚C
C
iss
)
DS
8
7
)
6
mA
(
5
D
4
3
Drain current I
2
1
0
012108264
)
Drain to source voltage VDS (V
gm I
20
I
)
mS
(
16
m
12
2mA
DSS
D
=5mA
Ta=25˚C
VGS=0V
– 0.1V
– 0.2V
– 0.3V
– 0.4V
VDS=10V
Ta=25˚C
)
9.6
8.0
)
mA
(
6.4
D
4.8
3.2
Drain current I
1.6
0
–1.0 0– 0.2– 0.8 – 0.4– 0.6
Gate to source voltage VGS (V
10
)
pF
(
oss
8
,C
iss
C
)
,
)
6
8
4
Mutual conductance g
0
– 0.8 0– 0.6 – 0.2– 0.4
=5mA
I
DSS
Gate to source voltage VGS (V
C
V
rss
DS
)
5
pF
(
rss
C
)
4
3
Common source
(
2
1
Reverse transfer capacitance
0
1 3 10 30 100
Drain to source voltage VDS (V
2mA
VGS=3V
f=1MHz
Ta=25˚C
Mutual conductance g
)
)
dB
(
Noise figure NF
)
8
4
0
082647153
Drain current ID (mA
)
NF f
12
10
8
6
R
=500Ω
4
2
0
10 10210310410
g
1kΩ
Frequency f (Hz
VDS=10V
I
=5.2mA
D
Ta=25˚C
)
Common source
(
Common source
(
Input capacitance
Output capacitance
5
4
C
2
0
1 3 10 30 100
oss
Drain to source voltage VDS (V
)
2
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