Panasonic 2SK0657 Datasheet
Silicon MOS FETs (Small Signal)
G
D
S
2SK657
Silicon N-Channel MOS FET
For switching
■ Features
●High-speed switching
●M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
±100
±200
400
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
123
2.5 2.5
Internal Connection
unit: mm
2.5±0.1
1.0
1.0
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
M Type Mold Package
4.1±0.2 4.5±0.1
1: Gate
2: Drain
3: Source
EIAJ: SC-71
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
*
ton, t
measurement circuit
off
V
out
200Ω
= 5V
V
GS
50Ω
100µF
V
DD
Symbol
I
DSS
I
GSS
V
V
R
| Yfs |
C
C
C
t
on
t
off
= 5V
DSS
th
DS(on)
iss
oss
rss
*
*
Conditions
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VGS = 0
ID = 100µA, VDS = V
GS
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
VDS = 5V, VGS = 0, f = 1MHz
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
90%
V
in
V
out
10%
t
ontoff
10%
90%
min
50
1.5
20
typ
10
20
max
10
50
3.5
50
15
6
1.2
Unit
µA
µA
V
V
Ω
mS
pF
pF
pF
ns
ns
1
Silicon MOS FETs (Small Signal)
2SK657
PD Ta ID V
0.7
)
W
0.6
(
D
0.5
0.4
0.3
0.2
0.1
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
C
, C
, C
iss
oss
rss
12
)
,
)
pF
(
10
rss
,C
Common source
(
oss
,C
8
iss
C
)
6
, Output capacitance
)
Common source
(
4
Common source
(
2
V
C
iss
C
oss
DS
VGS=0
f=1MHz
Ta=25˚C
DS
120
100
)
mA
(
80
D
60
40
Drain current I
20
0
012108264
)
Drain to source voltage VDS (V
ID V
120
100
GS
Ta=25˚C
VGS=6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
V
=5V
DS
Ta=25˚C
)
)
mA
(
80
D
60
40
Ta=–25˚C
25˚C
75˚C
60
)
mS
(
50
|
fs
40
30
20
10
Forward transfer admittance |Y
0
120
)
Ω
(
100
DS(on)
80
60
40
Drain current I
20
20
| Yfs | V
012108264
GS
VDS=5V
Ta=25˚C
Gate to source voltage VGS (V
R
V
DS(on)
GS
ID=20mA
Ta=75˚C
25˚C
–25˚C
)
Input capacitance
Reverse transfer capacitance
0
1 3 10 30 100
Drain to source voltage VDS (V
VIN I
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 1 10 1000.3 3 30
Output current IO (mA
C
O
rss
VO=5V
Ta=25˚C
)
0
012108264
)
Gate to source voltage VGS (V
Drain to source ON-resistance R
0
012108264
)
Gate to source voltage VGS (V
)
2
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