Panasonic 2SK0656 Datasheet
Silicon MOS FETs (Small Signal)
4.0±0.2
marking
2.54±0.15
1.271.27
3.0±0.215.6±0.5
2.0±0.2
0.7±0.1
0.45
–
0.1
123
+0.2
2SK656
Silicon N-Channel MOS FET
For switching
■ Features
●High-speed switching
●Small drive current owing to high input inpedance
●High electrostatic breakdown voltage
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
200
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Internal Connection
R
G
1
R
unit: mm
1: Source
2: Drain
3: Gate
EIAJ: SC-72
New S Type Package
D
2
S
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
1
*
Resistance ratio R1/R2 = 1/50
2
*
Pulse measurement
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
OH
V
OL
R1 + R
C
iss
C
oss
C
rss
*
t
on
t
off
Conditions
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100µA, VGS = 0
ID = 100µA, VDS = V
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
VDD = 5V, VGS = 1V, RL = 200Ω
VDD = 5V, VGS = 5V, RL = 200Ω
1
*
2
VDS = 10V, VGS = 0, f = 1MHz
2
VDD = 5V, VGS = 0 to 5V, RL = 200Ω
2
*
VDD = 5V, VGS = 5 to 0V, RL = 200Ω
min
40
50
GS
1.5
20
4.5
100
typ
35
4.5
1.1
max
10
80
Unit
µA
µA
V
3.5
50
V
Ω
mS
V
1
200
9
V
kΩ
pF
pF
pF
1
1
µs
µs
1
Silicon MOS FETs (Small Signal)
2SK656
PD Ta ID V
240
)
mW
(
200
D
160
120
80
40
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
| Yfs | V
50
)
mS
(
|
40
fs
30
20
10
Forward transfer admittance |Y
0
0108264
Gate to source voltage VGS (V
GS
VDS=5V
Ta=25˚C
)
,
)
Common source
(
Input capacitance
)
DS
120
100
)
mA
(
80
D
60
40
Drain current I
20
0
0108264
Drain to source voltage VDS (V
C
, C
V
iss
oss
12
)
pF
(
oss
10
,C
iss
C
)
8
6
Common source
(
4
2
Output capacitance
0
0.1 1 10 1000.3 3 30
Drain to source voltage VDS (V
Ta=25˚C
VGS=6.0V
DS
VGS=0
f=1MHz
Ta=25˚C
C
iss
C
oss
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
120
100
)
mA
(
80
D
60
40
Drain current I
20
0
0108264
)
)
Gate to source voltage VGS (V
120
)
Ω
(
100
DS(on)
80
60
40
20
Drain to source ON-resistance R
0
0108264
Gate to source voltage VGS (V
ID V
R
DS(on)
GS
V
VDS=5V
Ta=–25˚C
25˚C
75˚C
GS
I
=20mA
D
Ta=75˚C
)
25˚C
–25˚C
)
10
3
)
1
mA
(
0.3
O
0.1
0.03
0.01
Output current I
0.003
0.001
054132
2
IO V
IN
VO=5V
Ta=25˚C
Input voltage VIN (V
VIN I
O
1000
300
)
100
V
(
IN
30
10
3
Input voltage V
1
0.3
0.1
0.1 1 10 1000.3 3 30
)
Output current IO (mA
VO=1V
Ta=25˚C
)
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