Panasonic 2SK0655 User Manual

2SK0655

Silicon MOS FETs (Small Signal)

2SK0655 (2SK655)

Silicon N-Channel MOS FET

For switching

■ Features

●High-speed switching

●Allowing to supply with the radial taping

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter	Symbol	Ratings	Unit
Drain to Source voltage	VDS	50	V
Gate to Source voltage	VGSO	8	V
Drain current	ID	100	mA
Max drain current	IDP	200	mA
Allowable power dissipation	PD	200	mW
Channel temperature	Tch	150	°C
Storage temperature	Tstg	−55 to +150	°C

			unit: mm
	4.0±0.2		2.0±0.2
		(0.8)	3.0±0.2
0.75 max.		(0.8)	7.6
	15.6±0.5
0.45–0.10+0.20			0.45–0.10+0.20
	(2.5)	(2.5)
			0.7±0.1
1	2	3	1: Source
			2: Drain
			3: Gate
			NS-B1 Package

Internal Connection

D

G

S

■ Electrical Characteristics (Ta = 25°C)

Parameter	Symbol	Conditions		min	typ	max	Unit
Drain to Source cut-off current	IDSS	VDS = 10V, VGS = 0				10	µA
Gate to Source leakage current	IGSS	VGS = 8V, VDS = 0				50	µA
Drain to Source breakdown voltage	VDSS	ID = 100µA, VGS = 0		50			V
Gate threshold voltage	Vth	ID = 100µA, VDS = VGS		1.5		3.5	V
Drain to Source ON-resistance	RDS(on)	ID = 20mA, VGS = 5V				50	Ω
Forward transfer admittance	| Yfs |	ID = 20mA, VDS = 5V, f = 1kHz		20	35		mS
Input capacitance (Common Source)	Ciss				10	15	pF
Output capacitance (Common Source)	Coss	VDS = 5V, VGS = 0, f = 1MHz			4	5	pF
Reverse transfer capacitance (Common Source)	Crss				0.5	1	pF
Turn-on time	ton*	VDD = 5V, VGS = 0 to 5V, RL = 200Ω			10		ns
Turn-off time	toff*	VDD = 5V, VGS = 5 to 0V, RL = 200Ω			20		ns

* ton, toff measurement circuit

	Vout	200Ω
VGS = 5V		F
50Ω		100

		90%
	Vin	10%
VDD = 5V	Vout	10%
		90%

ton toff

Note) The part number in the parenthesis shows conventional part number.

283

Silicon MOS FETs (Small Signal)

2SK0655

				PD Ta								ID VDS
	240									120					Ta=25˚C
(mW)
	200									100
D									(mA)						VGS=6.0V
P	160									80					5.5V
powerAllowabledissipation									Draincurrent I						3.0V
									D						5.0V
	120									60					4.5V
	80									40					4.0V
	40									20					3.5V
	0									0					2.5V
	0	20	40	60	80	100	120	140	160	0	2	4	6	8	10	12
		Ambient temperature					Ta	(˚C)		Drain to source voltage					VDS	(V)

Forward transfer admittance |Y | (mS) fs

| Yfs | VGS

60

VDS=5V

Ta=25˚C

50

40

30

20

10

0

0

2

4

6

8

10

12

Gate to source voltage VGS (V)

Ciss, Coss, Crss VDS

source),

(pF)

12

VGS=0

f=1MHz

(Common

oss

Ta=25˚C

rss

10

,C

C

iss

capacitance

C

,C

8

iss

Output,capacitanceInputsource)(Common

capacitancetransferReversesource)(Common

6

C

rss

4

C

oss

2

0

1

3

10

30

100

Drain to source voltage

VDS

(V)

VIN IO

	100
																	VO=5V
	30																Ta=25˚C
(V)	10
IN	3
V
voltage	1
Input	0.3
	0.1
	0.03
	0.01
	0.1		0.3		1					3		10					30						100

Output current IO (mA)

ID VGS

	120
												VDS=5V
												Ta=25˚C
(mA)	100
	80
								Ta=–25˚C
D								25	˚C
I
current	60							75˚C
Drain	40
	20
	0
	0		2		4		6	8				10			12

Gate to source voltage VGS (V)

RDS(on) VGS

Ω)	120
											I	D	=20mA
(
DS(on)	100
R
resistance-ON	80
	60
										Ta=75˚						C
source	40
										–25˚C
to	20
Drain	0
	0		2		4		6		8			10					12

Gate to source voltage VGS (V)

284