Panasonic 2SK0615 Datasheet

Silicon MOS FETs (Small Signal)

2SK615

Silicon N-Channel MOS FET

For switching

■ Features

●Low ON-resistance

●High-speed switching

●Allowing to be driven directly by CMOS and TTL

●M type package, allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature

*

PC board: Copper foil of the drain portion should have a area of 1cm2 or

more and the board thickness should be 1.7mm.

Symbol

V

DS

V

GSO

I

D

I

DP

*

P

D

T

ch

T

stg

Ratings

80
20

±0.5

±1

1

150

−55 to +150

Unit

V
V
A

A
W
°C
°C

■ Electrical Characteristics (Ta = 25°C)

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time

1

*

Pulse measurement

2

*

ton, t

measurement circuit

off

V

= 10V

in

= 1µS

t
f = 1MHZ

50Ω

68Ω

V

DD

V

out

= 30V

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
C

iss

C

oss

C

rss

1, 2

*

t

on

1, 2

*

t

off

V

V

Conditions

VDS = 60V, VGS = 0
VGS = 20V, VDS = 0
IDS = 100µA, VGS = 0
ID = 1mA, VDS = V

1

*

ID = 0.5A, VGS = 10V
ID = 0.2A, VDS = 15V, f = 1kHz

VDS = 10V, VGS = 0, f = 1MHz

t

10%

on

90%

V

in

V

out

in

out

GS

10%

t

off

90%

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

123

2.5 2.5

min

typ

80

1.5
2

300

45
30

8

15
20

unit: mm

2.5±0.1

1.0

1.0

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

M Type Mold Package

max

10

0.1

4.1±0.2 4.5±0.1

1: Gate
2: Drain
3: Source

EIAJ: SC-71

Unit

µA
µA

V

3.5
4

V

Ω

mS

pF
pF
pF

ns
ns

1

Silicon MOS FETs (Small Signal)

2SK615

PD  Ta ID  V

1.6

)

1.4

W

(

D

1.2

1.0

0.8

0.6

0.4

0.2

Allowable power dissipation P

0

0 16040 12080 14020 10060

600

)

mS

(

500

|

fs

400

300

200

100

Forward transfer admittance |Y

0

0654132

Copper foil of the drain portion
should have a area of 1cm
or more and the board
thickness should be 1.7mm.

Ambient temperature Ta (˚C

| Yfs |  V

GS

Gate to source voltage VGS (V

2

VDS=15V
f=1kHz
Ta=25˚C

)
A

(

D

Drain current I

)

)

,

)

pF

(

rss

,C

Common source

(

oss

,C

iss

C

)

, Output capacitance

)

Common source

(

Common source

(

Input capacitance

Reverse transfer capacitance

)

DS

1.2

1.0

0.8

0.6

0.4

0.2

0

0108264

Drain to source voltage VDS (V

C

, C

, C

oss

rss

 V

C

iss

C

oss

C

rss

iss

120

100

80

60

40

20

0

1 10 100 10003 30 300

Drain to source voltage VDS (V

Ta=25˚C

VGS=5.5V

4.5V

3.5V

DS

VGS=0
f=1MHz
Ta=25˚C

ID  V

GS

1.2

1.0

)

5V

4V

A

(

0.8

D

0.6

0.4

VDS=10V
Ta=25˚C

Drain current I

3V

)

)

0.2

0

0108264

Gate to source voltage VGS (V

R

 V

DS(on)

6

)

Ω

(

5

DS(on)

4

3

2

1

Drain to source ON-resistance R

0

020164128

GS

I

D

Ta=75˚C
25˚C

–25˚C

Gate to source voltage VGS (V

)

=500mA

)

R

 Ta

DS(on)

6

)

Ω

(

5

DS(on)

4

V

=5V

3

2

1

Drain to source ON-resistance R

0

–50 7550–25 250

GS

Ambient temperature Ta (˚C

2

ID=500mA

10V

)