Panasonic 2SK0614 User Manual
277
Silicon MOS FETs (Small Signal)
unit: mm
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
■ Features
● Low ON-resistance R
DS(on)
● High-speed switching
● Allowing to be driven directly by CMOS and TTL
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
80
20
±0.5
±1
750
150
−55 to +150
Unit
V
V
A
A
mW
°C
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
*
1
| Y
fs
|
C
iss
C
oss
C
rss
t
on
*
2
t
off
*
2
Conditions
V
DS
= 60V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
DS
= 100µA, V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
I
D
= 0.5A, V
GS
= 10V
I
D
= 0.2A, V
DS
= 15V, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
*
1
Pulse measurement
*
2
t
on
, t
off
measurement circuit
min
80
1.5
typ
2
300
45
30
8
15
20
Unit
µA
µA
V
V
Ω
mS
pF
pF
pF
ns
ns
max
10
0.1
3.5
4
V
in
= 10V
t
= 1µS
f = 1MHZ
50Ω
68Ω
t
on
t
off
V
in
10%
90%
10%
90%
V
out
V
in
V
out
V
DD
= 30V
V
out
1: Source
2: Drain
3: Gate
JEDEC: TO-92
EIAJ: SC-43
TO-92-A1 Package
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Note) The part number in the parenthesis shows conventional part number.
查询2SK0614供应商
278
Silicon MOS FETs (Small Signal)
P
D
Ta I
D
V
DS
I
D
V
GS
| Y
fs
| V
GS
C
iss
, C
oss
, C
rss
V
DS
R
DS(on)
V
GS
R
DS(on)
Ta
2SK0614
0 16040 12080 14020 10060
0
1200
1000
800
600
400
200
Ambient temperature Ta
(
˚C
)
Allowable power dissipation P
D
(
mW
)
0108264
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25˚C
5V
4V
3V
4.5V
3.5V
V
GS
=5.5V
Drain to source voltage V
DS
(
V
)
Drain current I
D
(
A
)
0108264
0
1.2
1.0
0.8
0.6
0.4
0.2
V
DS
=10V
Ta=25˚C
Gate to source voltage V
GS
(
V
)
Drain current I
D
(
A
)
0654132
0
600
500
400
300
200
100
V
DS
=15V
f=1kHz
Ta=25˚C
Gate to source voltage V
GS
(
V
)
Forward transfer admittance |Y
fs
|
(
mS
)
1 10 100 10003 30 300
0
120
100
80
60
40
20
V
GS
=0
f=1MHz
Ta=25˚C
C
iss
C
oss
C
rss
Drain to source voltage V
DS
(
V
)
Input capacitance
(
Common source
)
, Output capacitance
(
Common source
)
,
Reverse transfer capacitance
(
Common source
)
C
iss
,C
oss
,C
rss
(
pF
)
020164128
0
6
5
4
3
2
1
Ta=75˚C
25˚C
–25˚C
I
D
=500mA
Gate to source voltage V
GS
(
V
)
Drain to source ON-resistance R
DS(on)
(
Ω
)
–50 7550–25 250
0
6
5
4
3
2
1
I
D
=500mA
V
GS
=5V
10V
Ambient temperature Ta
(
˚C
)
Drain to source ON-resistance R
DS(on)
(
Ω
)
Loading...