Panasonic 2SK0374 Datasheet
Silicon Junction FETs (Small Signal)
2SK374
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
■ Features
●Low noise-figure (NF)
●High gate to drain voltage V
GDO
●Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
ch
T
stg
Ratings
55
−55
−55
30
10
200
150
−55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
3
unit: mm
1.45
+0.1
–0.05
0.4
+0.1
–0.06
0.16
+0.2
2.8
–0.3
+0.25
1.5
0.65±0.15 0.65±0.15
1
–0.05
2.9
+0.2
0.950.95
1.9±0.2
–0.1
0.8
1.1
0.1 to 0.3
0.4±0.2
2
+0.2
1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini Type Package (3-pin)
–0.05
0 to 0.1
Marking Symbol (Example): 2B
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
*
I
rank classification
DSS
Runk
I
(mA)
DSS
Marking Symbol
P
1 to 3
2BP
Symbol
I
DSS
I
GSS
V
GDC
V
GSC
g
m
C
iss
C
rss
NF
Q
2 to 6.5
2BQ
*
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
IG = −100µA, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, Rg = 100kΩ
f = 100Hz
5 to 12
2BR
Conditions
R
S
min
1
−55
2.5
typ
−80
7.5
6.5
1.9
2.5
max
20
−10
−5
Unit
mA
nA
V
V
mS
pF
pF
dB
10 to 20
2BS
1
Silicon Junction FETs (Small Signal)
2SK374
PD Ta ID V
240
)
mW
(
200
D
160
120
80
40
Allowable power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
16
14
)
12
mA
(
10
D
8
Ta=–25˚C
6
Drain current I
4
2
ID V
75˚C
GS
25˚C
VDS=10V
DS
5
4
)
mA
(
3
D
2
Drain current I
1
0
0 0.60.50.40.1 0.30.2
)
Drain to source voltage VDS (V
gm V
12
)
10
mS
(
m
8
6
4
2
Mutual conductance g
GS
V
GS
Ta=25˚C
=0
VDS=10V
Ta=25˚C
– 0.2V
– 0.4V
– 0.6V
– 0.8V
–1.0V
)
10
8
)
mA
(
6
D
4
Drain current I
2
0
012108264
Drain to source voltage VDS (V
12
)
10
mS
(
m
8
6
4
2
Mutual conductance g
ID V
gm I
I
DSS
DS
D
=7.5mA
Ta=25˚C
VGS=0V
– 0.2V
– 0.4V
– 0.6V
– 0.8V
–1.0V
–1.2V
VDS=10V
Ta=25˚C
)
0
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
Gate to source voltage VGS (V
C
V
iss
16
)
pF
(
14
iss
C
)
12
10
8
Common source
(
6
4
2
Input capacitance
0
012108264
Drain to source voltage VDS (V
DS
VGS=0
Ta=25˚C
0
–2.0 0– 0.4–1.6 – 0.8–1.2
)
)
Gate to source voltage VGS (V
C
V
oss
)
8
pF
(
7
oss
C
)
6
5
4
Common source
(
3
2
1
Output capacitance
0
012108264
Drain to source voltage VDS (V
DS
VGS=0
Ta=25˚C
)
)
0
0108264
Drain current ID (mA
)
2
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