Panasonic 2SK0301 User Manual
247
Silicon Junction FETs (Small Signal)
unit: mm
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
■ Features
● Low noies, high gain
● High gate to drain voltage V
GDO
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
55
−55
−55
±30
10
250
125
−55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS
*
I
GSS
V
GDC
V
GSC
g
m
C
iss
C
rss
NF
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= −30V, V
DS
= 0
I
G
= −100µA, V
DS
= 0
V
DS
= 10V, I
D
= 10µA
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100kΩ
f = 100Hz
min
1
−55
2.5
max
20
−10
−5
Unit
mA
nA
V
V
mS
pF
pF
dB
*
I
DSS
rank classification
typ
−80
7.5
6.5
1.9
0.5
Runk
I
DSS
(mA)
P
1 to 3
Q
2 to 6.5
R
5 to 12
1: Drain
2: Gate
3: Source
JEDEC: TO-92
EIAJ: SC-43
TO-92 Type Package
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3±0.2
2.54±0.15
213
S
10 to 20
Note) The part number in the parenthesis shows conventional part number.
查询2SK0301供应商
248
Silicon Junction FETs (Small Signal)
P
D
Ta I
D
V
DS
I
D
V
DS
I
D
V
GS
g
m
V
GS
g
m
I
D
C
iss
V
DS
C
oss
V
DS
C
rss
V
DS
2SK0301
0 16040 12080 14020 10060
0
320
240
80
200
280
160
40
120
Ambient temperature Ta
(
˚C
)
Allowable power dissipation P
D
(
mW
)
00.60.50.40.1 0.30.2
0
5
4
3
2
1
Ta=25˚C
V
GS
=0
– 0.8V
– 0.6V
– 0.4V
– 0.2V
–1.0V
Drain to source voltage V
DS
(
V
)
Drain current I
D
(
mA
)
012108264
0
10
8
6
4
2
Ta=25˚C
V
GS
=0V
– 0.2V
– 0.4V
– 0.6V
– 0.8V
– 1.0V
– 1.2V
Drain to source voltage V
DS
(
V
)
Drain current I
D
(
mA
)
0 –1.2–1.0– 0.8– 0.2 – 0.6– 0.4
0
16
12
4
10
14
8
2
6
V
DS
=10V
Ta=–25˚C
25˚C
75˚C
Gate to source voltage V
GS
(
V
)
Drain current I
D
(
mA
)
–2.0 0– 0.4–1.6 – 0.8–1.2
0
12
10
8
6
4
2
V
DS
=10V
Ta=25˚C
Gate to source voltage V
GS
(
V
)
Mutual conductance g
m
(
mS
)
0108264
0
12
10
8
6
4
2
V
DS
=10V
Ta=25˚C
I
DSS
=7.5mA
Drain current I
D
(
mA
)
Mutual conductance g
m
(
mS
)
012108264
0
16
12
4
10
14
8
2
6
V
GS
=0
Ta=25˚C
Drain to source voltage V
DS
(
V
)
Input capacitance
(
Common source
)
C
iss
(
pF
)
012108264
0
8
6
2
5
7
4
1
3
V
GS
=0
Ta=25˚C
Drain to source voltage V
DS
(
V
)
Output capacitance
(
Common source
)
C
oss
(
pF
)
012108264
0
8
6
2
5
7
4
1
3
V
GS
=0
Ta=25˚C
Drain to source voltage V
DS
(
V
)
Reverse transfer capacitance
(
Common source
)
C
rss
(
pF
)
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