Panasonic 2SK0198 User Manual

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Silicon Junction FETs (Small Signal)

2SK0198 (2SK198)

Silicon N-Channel Junction FET

For low-frequency amplification

■ Features

●High mutual conductance g

●Low noise type

●Mini-type package, allowing downsizing of the sets and automatic

insertion through the tape/magazine packing.

■ Absolute Maximum Ratings (T

Parameter

Drain to Source voltage

Gate to Drain voltage

Drain current

Gate current

Allowable power dissipation

Channel temperature

Storage temperature

m

Symbol

V

DSX

V

GDO

I

D

I

G

P

D

T

ch

T

stg

= 25°C)

a

−55 to +150

Ratings

30

−30

20

10

150

150

Unit

V

V

mA

mA

mW

°C

°C

+0.10

0.40

–0.05

3

+0.25

–0.05

+0.2

–0.3

2.8

1.50

2

1

(0.95) (0.95)

±0.1

1.9

+0.20

2.90

–0.05

10˚

1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini3-G1 Package

(0.65)

+0.2

–0.1

1.1

0 to 0.1

+0.3

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5˚

Marking Symbol (Example): 1O

0.4±0.2

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Gate to Source cut-off voltage

Mutual conductance

Input capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Noise figure

*

I

rank classification

DSS

Runk

I

(mA)

DSS

Marking Symbol

P

0.5 to 3

1OP

Symbol

I

DSS

I

GSS

V

GSC

g

m

C

iss

C

rss

NV

Q

2 to 6

1OQ

= 25°C)

a

*

Conditions

V

= 10 V, VGS = 0

DS

V

= −30 V, VDS = 0

GS

V

= 10 V, ID = 10 µA

DS

V

= 10 V, ID = 0.5 mA, f = 1 kHz

DS

V

= 10 V, VGS = 0, f = 1 kHz

DS

V

= 10 V, VGS = 0, f = 1 MHz

DS

V

= 30 V, ID = 1 mA, GV = 80 dB

DS

R

= 100 kΩ, Function = FLAT

g

R

4 to 12

1OR

Note) The part number in the parenthesis shows conventional part number.

Publication date: January 2002 SJF00006BED

min

0.5

− 0.1

4

typ

13

14

3.5

60

max

12

−100

−1.5

Unit

mA

nA

V

mS

pF

pF

mV

1

2SK0198

P

 T

D

240

)

200

mW

(

D

160

120

80

40

Allowable power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (°C

g

 V

m

20

VDS = 10 V

= 25°C

T

a

)

16

mS

(

m

12

GS

I

a

8

7

6

)
mA

(

5

D

4

3

Drain current I

2

1

0

012108264

)

Drain to source voltage VDS (V

20

)

16

mS

(

m

12

2.0 mA

 V

D

g

m

 I

I

DSS

DS

D

= 5.0 mA

Ta = 25°C

VGS = 0 V

− 0.1 V

− 0.2 V

− 0.3 V

− 0.4 V

VDS = 10 V

= 25°C

T

a

9.6

8.0

)
mA

6.4

(

D

4.8

3.2

Drain current I

1.6

0

−1.0 0− 0.2− 0.8 − 0.4− 0.6

)

10

)

pF

(

8

oss

,C

iss

C

)

,

6

)

I

 V

D

GS

= 10 V

V

DS

Ta = 75°C

25°C

−25°C

Gate to source voltage VGS (V

C

, C

 V

iss

oss

DS

f = 1 MHz

= −3 V

V

GS

= 25°C

T

a

C

iss

)

8

I

= 5.0 mA

DSS

4

Mutual conductance g

0

− 0.8 0− 0.6 − 0.2− 0.4

Gate to source voltage VGS (V

C

 V

rss

DS

5

)
pF

(

rss

4

C

)

3

Common source

(

2

1

Reverse transfer capacitance

0

1 3 10 30 100

Drain to source voltage VDS (V

2.0 mA

VGS = −3 V
f = 1 MHz

= 25°C

T

a

8

4

Mutual conductance g

0

082647153

)

Drain current ID (mA

)

4

Common source

(

Common source

(

2

Input capacitance

Output capacitance

0

1 3 10 30 100

Drain to source voltage VDS (V

C

oss

)

NF  f

12

10

)
dB

8

(

6

= 500 Ω

R

4

g

Noise figure NF

2

1 kΩ

0

11010210310

)

Frequency f (Hz

V

DS

= 5.2 mA

I

D

= 25°C

T

a

)

= 10 V

5

2

SJF00006BED