Panasonic 2SK0123 Technical data

2SK0123

Silicon Junction FETs (Small Signal)

2SK0123 (2SK123)

Silicon N-Channel Junction FET

For impedance conversion in low frequency For electret capacitor microphone

■ Features

● High mutual conductance gm ● Low noise voltage of NV

■ Absolute Maximum Ratings (Ta =			25° C)
Parameter	Symbol		Ratings	Unit
Drain to Source voltage	VDSO		20	V
Drain to Gate voltage	VDGO		20	V
Drain to Source current	IDSO		2	mA
Drain to Gate current	IDGO		2	mA
Gate to Source current	IGSO		2	mA
Allowable power dissipation	PD		200	mW
Operating ambient temperature	Topr		− 20 to + 80	°C
Storage temperature	Tstg		− 55 to + 150	°C

■ Electrical Characteristics (Ta = 25° C)

Unit: mm

0.40+0.10

–0.05

0.16–0.06+0.10

3

+0.25

–0.05

+0.2 –0.3

1.50

2.8

5˚

0.4± 0.2

1

2

(0.95)

(0.95)

(0.65)

1.9± 0.1

2.90–0.05+0.20

10˚

+0.2

–0.1

+0.3 –0.1

1.1

1.1

0 to 0.1

1: Drain

2: Source

3: Gate

Mini3-G1 Package

Marking Symbol: 1H

Note: For the forming type, (Y) is indicated after the part No.

Parameter

Symbol

Conditions

min

typ

max

Unit

Current consumption

ID

VD = 4.5 V, CO = 10 pF, RD =

2.2 kΩ ± 1%

100

600

µ A

Drain to Source cut-off current

IDSS

VDS =

4.5 V, VGS =

0

95

480

µ A

Mutual conductance

gm

VD =

4.5 V, VGS =

0, f =

1 kHz

0.7

1.6

mS

Noise figure

NV

VD =

4.5V, RD =

2.2 kΩ

±

1%

4

µ V

CO =

10 pF, A-curve

GV1

− 3

2

dB

Voltage gain

GV2

VD =

4.5 V, RD =

2.2 kΩ

±

1%

0

3.3

dB

CO =

10 pF, eG =

10 mV, f = 1 kHz

GV3

VD =

12 V, RD =

2.2 kΩ

±

1%

− 4.5

− 0.3

dB

CO =

10 pF, eG =

10 mV, f = 1 kHz

Voltage gain difference

∆ |GV2 − GV1|

VD =

1.5 V, RD =

2.2 kΩ

±

1%

0

+ 3.5

dB

∆ |GV1 − GV3|

CO =

10 pF, eG =

10 mV, f = 1 kHz

0

+ 3.5

dB

Note) The part number in the parenthesis shows conventional part number.

Publication date: January 2002

SJF00005BED

1

2SK0123
			PD Ta							ID VDS								ID VGS
	240						0.40								600					VDS =		4.5 V
(mW)													Ta =	25° C
	200						0.35				VGS =		0 V		500
D						(mA)	0.30							(mA)
P	160		T												400						−	25° C
powerAllowabledissipation						Draincurrent I	0.25				−	0.05 V		Draincurrent I
						D								D
	120						0.20								300				Ta =	75° C
							0.15				−	0.10 V
	80														200
			max.				0.10				−	0.15 V
	40						0.05				−	0.20 V			100			25° C
			opr
	0	0	20 40 60 80 100	120	140	160	0	0	2	4	6	8	10	12	−0	0.5	− 0.4	− 0.3	− 0.2	−	0.1	0
			Ambient temperature	Ta	(° C)				Drain to source voltage				VDS	(V)		Gate to source voltage				VGS		(V)

(mS)

Mutual conductance g m

gm VGS

2.0

VDS = 4.5 V f = 1 kHz

Ta = 25° C

1.6

1.2

IDSS

= 0.3

mA

0.8

0.4

0.15 mA

0

− 1.0

− 0.8 − 0.6 − 0.4

− 0.2

0

Gate to source voltage

VGS

(V)

(mS)

Mutual conductance g m

gm ID

2.0

VDS = 4.5 V f = 1 kHz

Ta = 25° C

1.6

1.2

IDSS = 0.3 mA

0.8

0.4

0

0

0.1

0.2

0.3

0.4

0.5

Drain current ID (mA)

2	SJF00005BED