Panasonic 2SK0123 Technical data

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Silicon Junction FETs (Small Signal)

2SK0123 (2SK123)

Silicon N-Channel Junction FET

For impedance conversion in low frequency

For electret capacitor microphone

■ Features

●High mutual conductance g

●Low noise voltage of NV

■ Absolute Maximum Ratings (T

Parameter

Drain to Source voltage

Drain to Gate voltage

Drain to Source current

Drain to Gate current

Gate to Source current

Allowable power dissipation

Operating ambient temperature

Storage temperature

m

Symbol

V

DSO

V

DGO

I

DSO

I

DGO

I

GSO

P

D

T

opr

T

stg

= 25°C)

a

−20 to +80

−55 to +150

Ratings

20

20

2

2

2

200

Unit

V

V

mA

mA

mA

mW

°C

°C

Unit: mm

+0.10

0.40

10˚

3

1

(0.95) (0.95)

±0.1

1.9

+0.20

2.90

–0.05

–0.05

+0.25

–0.05

+0.2

–0.3

2.8

1.50

2

(0.65)

+0.2

–0.1

+0.3

–0.1

1.1

1.1

0 to 0.1

+0.10

0.16

–0.06

5˚

Mini3-G1 Package

0.4±0.2

1: Drain
2: Source
3: Gate

Marking Symbol: 1H

Note: For the forming type, (Y) is indicated after the part No.

■ Electrical Characteristics (T

Parameter

Current consumption

Drain to Source cut-off current

Mutual conductance

Noise figure

Voltage gain

Voltage gain difference

Symbol

I

D

I

DSS

g

m

NV

G

G

G

∆|GV2 − G
∆|GV1 − G

= 25°C)

a

V1

V2

V3

Conditions

V

= 4.5 V, CO = 10 pF, RD = 2.2 kΩ ± 1%

D

V

= 4.5 V, VGS = 0

DS

V

= 4.5 V, VGS = 0, f = 1 kHz

D

V

= 4.5V, RD = 2.2 kΩ ± 1%

D

C

= 10 pF, A-curve

O

V

= 4.5 V, RD = 2.2 kΩ ± 1%

D

C

= 10 pF, eG = 10 mV, f = 1 kHz

O

V

= 12 V, RD = 2.2 kΩ ± 1%

D

C

= 10 pF, eG = 10 mV, f = 1 kHz

O

|

V

= 1.5 V, RD = 2.2 kΩ ± 1%

V1

D

|

C

= 10 pF, eG = 10 mV, f = 1 kHz

V3

O

Note) The part number in the parenthesis shows conventional part number.

min

100

95

0.7

−3

0

−4.5

0

0

typ

1.6

2

3.3

− 0.3

max

600

480

4

+3.5
+3.5

Unit

µA
µA

mS

µV

dB

dB

dB

dB

dB

Publication date: January 2002 SJF00005BED

1

2SK0123

P

 T

D

240

)

200

mW

(

D

160

120

80

40

Allowable power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (°C

2.0
V

DS

f = 1 kHz

= 25°C

T

)
mS

(

a

1.6

m

1.2

0.8

= 4.5 V

g

 V

m

max.

opr

T

I

DSS

a

GS

= 0.3 mA

I

 V

D

DS

0.40

0.35

0.30

)
mA

(

0.25

D

0.20

0.15

Drain current I

0.10

0.05

0

012108264

)

Drain to source voltage VDS (V

g

 I

m

2.0

)

1.6

mS

(

m

1.2

0.8

I

DSS

= 0.3 mA

VGS = 0 V

− 0.05 V

− 0.10 V

− 0.15 V

− 0.20 V

D

V
f = 1 kHz
T

Ta = 25°C

= 4.5 V

DS

= 25°C

a

)

600

500

)
mA

400

(

D

300

200

Drain current I

100

0

− 0.5 0− 0.1− 0.4 − 0.2− 0.3

I

 V

D

GS

V

= 4.5 V

DS

Ta = 75°C

25°C

−25°C

Gate to source voltage VGS (V

)

0.4

Mutual conductance g

0

−1.0 0− 0.2− 0.8 − 0.4− 0.6

Gate to source voltage VGS (V

0.15 mA

0.4

Mutual conductance g

0

0 0.50.40.1 0.30.2

)

Drain current ID (mA

)

2

SJF00005BED