Panasonic 2SJ163 User Manual

2SJ163

Silicon Junction FETs (Small Signal)

2SJ163

Silicon P-Channel Junction FET

For general switching

Complementary to 2SK1103

■ Features

●Low ON-resistance

●Low-noise characteristics

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter	Symbol	Ratings	Unit
Gate to Drain voltage	VGDS	65	V
Drain current	ID	−20	mA
Gate current	IG	−10	mA
Allowable power dissipation	PD	150	mW
Channel temperature	Tch	150	°C
Storage temperature	Tstg	−55 to +150	°C

				+0.2		unit: mm
				2.8 –0.3
		0.65±0.15		+0.25	0.65±0.15
				1.5 –0.05
	2.9 –0.05	1.9±0.2	0.95 0.95	1
+0.2					3
					1.45	+0.1	–0.05
				2			0.4
	+0.2	1.1 –0.1	0.8			+0.1	0.16 –0.06
		0.1 to 0.3		0.1
			0.4±0.2
				0 to
1: Source					JEDEC: TO-236
2: Drain					EIAJ: SC-59
3: Gate				Mini Type Package (3-pin)

Marking Symbol (Example): 4M

■ Electrical Characteristics (Ta = 25°C)

Parameter			Symbol			Conditions		min	typ	max	Unit
Drain to Source cut-off current			*		VDS = −10V, VGS = 0			− 0.2		−6	mA
			IDSS
Gate to Source leakage current			IGSS		VGS = 30V, VDS = 0					10	nA
Gate to Drain voltage			VGDS		IG = 10µA, VDS = 0			65			V
Gate to Source cut-off voltage			VGSC		VDS = −10V, ID = −10µA				1.5	3.5	V
Forward transfer admittance			| Yfs |		VDS = −10V, ID = −1mA, f = 1kHz			1.8	2.5		mS
Drain to Source ON-resistance			RDS(on)		VDS = −10mV, VGS = 0				300		Ω
Input capacitance (Common Source)			Ciss		VDS = −10V, VGS = 0, f = 1MHz				12		pF
Reverse transfer capacitance (Common Source)			Crss						4		pF
* IDSS rank classification
Runk	O		P		Q	R
IDSS (mA)	− 0.2 to −1	− 0.6 to −1.5			−1 to −3	−2.5 to −6
Marking Symbol	4MO		4MP		4MQ	4MR

1

Silicon Junction FETs (Small Signal)

2SJ163

PD Ta

ID VDS

200

–4.0

(mW)

Ta=25˚C

175

–3.5

D

150

(mA)

–3.0

P

powerAllowabledissipation

125

Draincurrent I

–2.5

D

100

–2.0

VGS=0V

75

–1.5

0.2V

50

–1.0

0.4V

0.6V

25

– 0.5

0.8V

0

0

0

20

40

60

80

100

120

140

160

0

–2

–4

–6

–8

–10

–12

Ambient temperature

Ta

(˚C)

Drain to source voltage

VDS

(V)

ID VGS

	–3.0
									VDS=–10V
(mA)	–2.5
	–2.0
D
I
current	–1.5
Drain	–1.0
	– 0.5
	0
	0		1		2		3		4		5
	Gate to source voltage								VGS		(V)

					| Yfs | VGS													| Yfs | ID
(mS)	4.0												(mS)	16
	3.5		f=1kHz											14										f=1kHz
			VDS=–10V																					VDS=–10V
|			Ta=25˚C										|											Ta=25˚C
fs													fs
|Y	3.0												|Y	12
admittance	2.5												admittance	10
transfer	2.0												transfer	8
	1.5													6
Forward	1.0												Forward	4
	0.5													2
	0													0
	2.0		1.5			1.0			0.5		0			0		–2		–4		–6		–8			–10			–12
	Gate to source voltage								VGS		(V)					Drain current						ID		(mA)

source),	(pF)
(Common	oss
	rss
capacitance	,C
	C
	,C
	iss
Input capacitance (Common source), Output	Reverse transfer capacitance (Common source)

Ciss, Coss, Crss VDS

24

f=1MHz

VGS=0

20

Ta=25˚C

16

Ciss

12

8

4

Coss

0

Crss

–1

–3

–10

–30

–100

Drain to source voltage VDS (V)

2