Panasonic 2SJ0536 Datasheet

Silicon MOS FETs (Small Signal)

2SJ0536

Silicon P-Channel MOS FET

Secondary battery pack (Li ion battery, etc.)
For switching

■ Features

●High-speed switching

●S-mini type package, allowing downsizing of the sets and auto-

matic insertion through the tape/magazine packing.

●Low-voltage drive (V

: −1 to 2V)

th

●Low Ron

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature

Symbol

V

DS

V

GSO

I

D

I

DP

P

D

T

ch

T

stg

Ratings

−30
±20

−100

−200

150
150

−55 to +150

Unit

V

V
mA
mA

mW

°C
°C

unit: mm

2.1±0.1

1.25±0.1 0.4250.425

–0

1

1.3±0.10.9±0.1

2.0±0.2

0.650.2 0.65

2

0.7±0.1

0.2±0.1

0 to 0.1

1: Gate
2: Source EIAJ: SC-70
3: Drain S-Mini Type Package (3-pin)

+0.1

0.3

3

–0.05

+0.1

0.15

Marking Symbol: 2C

■ Electrical Characteristics (Ta = 25°C)

Parameter

Drain current
Gate cut-off current
Gate threshold voltage
Forward transfer admittance
Drain to source ON-resistance
Turn-on time
Turn-off time

Symbol

I

DSS

I

GSS

V

th

| Yfs |
R

DS(on)

t

on

t

off

VDS = −30V, VGS = 0
VGS = ±20V, VDS = 0
VDS = −5V, ID = −1µA
VDS = −5V, ID = −10mA
VGS = −5V, ID = −10mA
VDD = −5V, VGS = −5 to 0V, RL = 200Ω
VDD = −5V, VGS = −5 to 0V, RL = 200Ω

Conditions

min

−1

8

typ

50

100

25

max

− 0.1

±1

−2

75

Unit

µA
µA

V

mS

Ω
µs
µs

1

Silicon MOS FETs (Small Signal)

2SJ0536

PD  Ta ID  V

200

)
mW

(

160

D

120

80

40

Allowable power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

ID  V

GS

–240

–200

)
mA

(

–160

D

–120

–80

Drain current I

–40

0

0 –12–10–8–2 –6–4

Gate to source voltage VGS (V

Ta=–25˚C

25˚C
75˚C

VDS=–5V

DS

–120

–100

Ta=25˚C

)
mA

(

–80

D

–60

–40

Drain current I

–20

0

0 –12–10–8–2 –6–4

)

Drain to source voltage VDS (V

VIN  I

–100

–30

)

–10

V

(

IN

–3

–1

– 0.3

Input voltage V

– 0.1

– 0.03

– 0.01

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Output current IO (mA

O

VGS=–5.5V

–5.0V

–4.5V

–4.0V
–3.5V

–3.0V
–2.5V

VO=–5V
Ta=25˚C

)

)

60

)
mS

(

50

|

fs

40

30

20

10

Forward transfer admittance |Y

0

| Yfs |  V

0 –12–10–8–2 –6–4

GS

VDS=–5V

Gate to source voltage VGS (V

)

2