Panasonic 2SJ0364 Datasheet

Silicon Junction FETs (Small Signal)

2SJ364

Silicon P-Channel Junction FET

For analog switch

■ Features

●Low ON-resistance

●Low-noise characteristics

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature

Symbol

V

GDS

I

D

I

G

P

D

T

ch

T

stg

Ratings

65

−20

−10

150
150

−55 to +150

■ Electrical Characteristics (Ta = 25°C)

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)

Symbol

*

I

DSS

I

GSS

V

GDS

V

GSC

| Yfs |
R

DS(on)

C

iss

C

rss

VDS = −10V, VGS = 0
VGS = 30V, VDS = 0
IG = 10µA, VDS = 0
VDS = −10V, ID = −10µA
VDS = −10V, ID = −1mA, f = 1kHz
VDS = −10mV, VGS = 0

VDS = −10V, VGS = 0, f = 1MHz

Unit

V
mA
mA

mW

°C
°C

Conditions

unit: mm

2.1±0.1

1.25±0.1 0.4250.425

–0

1

1.3±0.10.9±0.1

2.0±0.2

0.650.2 0.65

2

0.7±0.1

0.2±0.1

0 to 0.1

1: Source
2: Drain EIAJ: SC-70
3: Gate S-Mini Type Package (3-pin)

+0.1

0.3

3

–0.05

+0.1

0.15

Marking Symbol (Example): 4M

min

− 0.2

65

1.8

typ

1.5

2.5

300

12

4

max

−6
10

3.5

Unit

mA

nA

V
V

mS

Ω

pF
pF

*

I

rank classification

DSS

Runk

I

(mA)

DSS

Marking Symbol

O

− 0.2 to −1

4MO

P

− 0.6 to −1.5

4MP

Q

−1 to −3

4MQ

R

−2.5 to −6

4MR

1

Silicon Junction FETs (Small Signal)

2SJ364

PD  Ta ID  V

200

)

175

mW

(

D

150

125

100

75

50

25

Allowable power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

| Yfs |  V

4.0

)

VDS=–10V

mS

3.5

f=1kHz

(

Ta=25˚C

|

fs

3.0

2.5

2.0

1.5

1.0

0.5

Forward transfer admittance |Y

0

2.0 01.5 0.51.0

Gate to source voltage VGS (V

GS

DS

–4.0

–3.5

)

–3.0

mA

(

–2.5

D

–2.0

–1.5

Drain current I

–1.0

–0.5

0

0 –12–10–8–2 –6–4

)

Drain to source voltage VDS (V

| Yfs |  I

16

)
mS

14

(
|

fs

12

10

8

6

4

2

Forward transfer admittance |Y

0

0 –12–10–8–2 –6–4

)

Drain current ID (mA

D

VDS=–10V
f=1kHz
Ta=25˚C

Ta=25˚C

VGS=0V

0.2V

0.4V

0.6V

0.8V

)

)

–3.0

–2.5

)
mA

(

–2.0

D

–1.5

–1.0

Drain current I

– 0.5

0

054132

Gate to source voltage VGS (V

24

)

,

)

pF

(

20

rss

,C

Common source

(

oss

,C

16

iss

C

)

12

, Output capacitance

)

Common source

(

8

Common source

(

4

Input capacitance

Reverse transfer capacitance

0

–1 –3 –10 –30 –100

Drain to source voltage VDS (V

ID  V

GS

VDS=–10V

)

C

, C

, C

oss

rss

 V

C

iss

C

oss

C

rss

DS

f=1MHz

=0

V

GS

Ta=25˚C

iss

)

2