Panasonic 2SJ0164 User Manual

2SJ0164

Silicon Junction FETs (Small Signal)

2SJ0164 (2SJ164)

Silicon P-Channel Junction FET

For switching

Complementary to 2SK1104

■ Features

●Low ON-resistance

●Low-noise characteristics

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter	Symbol	Ratings	Unit
Gate to Drain voltage	VGDS	65	V
Drain current	ID	−20	mA
Gate current	IG	−10	mA
Allowable power dissipation	PD	300	mW
Channel temperature	Tch	150	°C
Storage temperature	Tstg	−55 to +150	°C

			unit: mm
	4.0±0.2		2.0±0.2
		(0.8)	3.0±0.2
0.75 max.		(0.8)	7.6
	15.6±0.5
0.45–0.10+0.20			0.45–0.10+0.20
	(2.5)	(2.5)
			0.7±0.1
1	2	3	1: Source
			2: Gate
			3: Drain
			NS-B1 Package

■ Electrical Characteristics (Ta = 25°C)

Parameter	Symbol	Conditions	min	typ	max	Unit
Drain to Source cut-off current	*	VDS = −10V, VGS = 0	− 0.2		−6	mA
	IDSS
Gate to Source leakage current	IGSS	VGS = 30V, VDS = 0			10	nA
Gate to Drain voltage	VGDS	IG = 10µA, VDS = 0	65			V
Gate to Source cut-off voltage	VGSC	VDS = −10V, ID = −10µA		1.5	3.5	V
Forward transfer admittance	| Yfs |	VDS = −10V, ID = −1mA, f = 1kHz	1.8	2.5		mS
Drain to Source ON-resistance	RDS(on)	VDS = −10mV, VGS = 0		300		Ω
Input capacitance (Common Source)	Ciss			10		pF
Output capacitance (Common Source)	Coss	VDS = −10V, VGS = 0, f = 1MHz		3		pF
Reverse transfer capacitance (Common Source)	Crss			3		pF

* IDSS rank classification

Runk	O	P	Q	R
IDSS (mA)	− 0.2 to −1	− 0.6 to −1.5	−1 to −3	−2.5 to −6

Note) The part number in the parenthesis shows conventional part number.

237

Silicon Junction FETs (Small Signal)

2SJ0164

PD Ta

ID VDS

200

–4.0

(mW)

Ta=25˚C

175

–3.5

D

150

(mA)

–3.0

P

powerAllowabledissipation

125

Draincurrent I

–2.5

D

100

–2.0

VGS=0V

75

–1.5

0.2V

50

–1.0

0.4V

0.6V

25

– 0.5

0.8V

0

0

0

20

40

60

80 100 120 140 160

0

–2

–4 –6 –8

–10

–12

Ambient temperature

Ta

(˚C)

Drain to source voltage

VDS

(V)

| Yfs | VGS

| Yfs | ID

(mS)	4.0												(mS)	16
	3.5		f=1kHz											14										f=1kHz
			VDS=–10V																					VDS=–10V
|			Ta=25˚C										|											Ta=25˚C
fs													fs
|Y	3.0												|Y	12
admittance	2.5												admittance	10
transfer	2.0												transfer	8
	1.5													6
Forward	1.0												Forward	4
	0.5													2
	0													0
	2.0		1.5			1.0			0.5		0			0		–2		–4		–6		–8			–10 –12
	Gate to source voltage								VGS		(V)					Drain current						ID		(mA)

ID VGS

	–3.0
			VDS=–10V
			Ta=25˚C
(mA)	–2.5
	–2.0
D
I
current	–1.5
Drain	–1.0

–0.5

0

0

1

2

3

4

5

Gate to source voltage

VGS

(V)

Ciss, Coss, Crss VDS

,source)

(pF)

24

VGS=0

f=1MHz

(Common

oss

Ta=25˚C

rss

20

,C

capacitance

C

,C

16

iss

Ciss

Output,capacitanceInputsource)(Common

capacitancetransferReversesource)(Common

12

8

4

Coss

0

Crss

–1

–3

–10

–30

–100

Drain to source voltage VDS (V)

238