Panasonic 2SD2620J Datasheet
Transistors
2SD2620J
Silicon NPN epitaxial planer type
For low-frequency amplification
■ Features
• High forward current transfer ratio h
• Low collector to emitter saturation voltage
• High emitter to base voltage V
• SS-mini type package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
BEO
FE
CBO
CEO
EBO
CP
C
C
j
−55 to +125 °C
stg
V
CE(sat)
100 V
100 V
15 V
50 mA
20 mA
125 mW
125 °C
+0.05
1.60
–0.03
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5°
1: Base
2: Emitter EIAJ: SC-81
3: Collector SS-Mini Type Package
Marking Symbol: 3B
0.80±0.05(0.80)
+0.05
–0.03
0.85
+0.05
–0.03
0 to 0.02
0.70
1.60±0.05
0.12
5°
+0.03
–0.01
Unit: mm
(0.375)
0.10 max.
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
I
CBO
CEO
CBO
CEO
EBO
Forward current transfer ratio h
Collector to emitter saturation voltage V
CE(sat)IC
Transition frequency f
Noise voltage NV VCE = 10 V, IC = 1 mA, GB = 80 dB 80 mV
VCB = 60 V, IE = 0 0.1 µA
VCE = 60 V, IB = 0 1.0 µA
IC = 10 µA, IE = 0 100 V
IC = 1 mA, IB = 0 100 V
IE = 10 µA, IC = 015V
VCE = 10 V, IC = 2 mA 400 1 200
FE
= 10 mA, IB = 1 mA 0.05 0.2 V
VCB = 10 V, IE = −2 mA, f = 200 MHz 200 MHz
T
Rg = 100 kΩ, Function = FLAT
1
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