Panasonic 2SD2598 Datasheet

Transistor

2SD2598

Silicon NPN epitaxial planer type
darlington

For low-frequency amplification

Features

■

●

Forward current transfer ratio hFE is designed high, which is ap­propriate to the driver circuit of motors and printer bammer: h
= 4000 to 20000.

●

A shunt resistor is omitted from the driver.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*1

P

C

T

j

T

stg

Ratings

60
50

5
750
500

1
150

–55 ~ +150

Unit

V
V

V
mA
mA

W
˚C
˚C

Unit: mm

2.5±0.1

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

FE

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Internal Connection

C

B

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

*1

hFE Rank classification

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

Rank Q R

h

4000 ~ 10000 8000 ~ 20000

FE

E

Conditions

VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0

*1

VCE = 10V, IC = 500mA
IC = 500mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz

min

60
50

5

4000

typ

max

100
100

20000

2.5

3.0

200

*2

Pulse measurement

Unit

nA
nA

V
V
V

V
V

MHz

1

Transistor

2SD2598

PC — Ta IC — V

2.0

)
W

(

1.6

C

1.2

0.8

0.4

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

75˚C

C

IC/IB=1000

25˚C

Collector current IC (A

)

V

CE

900

IB=150µA

750

)
mA

(

600

C

450

300

Collector current I

150

0

012108264

)

Collector to emitter voltage VCE (V

125µA100µA

hFE — I

5

10

FE

4

10

3

10

2

10

10

Ta=75˚C

25˚C

–25˚C

Ta=25˚C

75µA

50µA

C

VCE=10V

Forward current transfer ratio h

)

100

V

(

30

CE(sat)

10

3

25˚C

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (mA

9.0

)
pF

(

7.5

ob

6.0

4.5

3..0

1.5

— I

CE(sat)

Ta=–25˚C

75˚C

Cob — V

CB

C

IC/IB=1000

)

f=1MHz
I

=0

E

Ta=25˚C

Collector output capacitance C

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

0

1 3 10 30 100

Collector to base voltage VCB (V

)

2