Panasonic 2SD2575 Datasheet
Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Features
■
●
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1
Measuring time: t = 380µsec
Symbol
V
CBO
V
CEO
V
EBO
*1
I
CP
I
C
P
C
T
j
T
stg
Ratings
–55 ~ +150
15
10
10
750
150
9
5
CE(sat)
Unit: mm
5.0±0.2 4.0±0.2
.
5.1±0.213.5±0.5
Unit
V
V
+0.2
0.45
–0.1
1.27 1.27
0.45
+0.2
–0.1
V
A
A
mW
˚C
213
2.54±0.15
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
VCB = 10V, IE = 0
VCE = 5V, IB = 0
VEB = 5V, IC = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 2A
IC = 3A, IB = 0.1A
*
*
*
VCB = 6V, IE = –50mA, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz
min
10
10
700
195
typ
max
0.28
170
45
*
Pulse measurement
0.1
1.0
0.1
0.5
65
Unit
µA
µA
µA
V
V
V
MHz
pF
1
Transistor
2SD2575
PC — Ta IC — V
1000
)
mW
(
800
C
600
400
200
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
hFE — I
C
2400
FE
2000
1600
1200
Ta=75˚C
25˚C
–25˚C
VCE=2V
V
CE
)
6
5
)
A
(
4
C
3
2
Collector current I
1
0
012108264
)
Collector to emitter voltage VCE (V
Cob — V
90
)
pF
(
75
ob
60
45
CB
Ta=25˚C
=5.0mA
I
B
4.5mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
f=1MHz
I
=0
E
Ta=25˚C
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
CE(sat)
Ta=75˚C
25˚C
— I
–25˚C
C
IC/IB=30
)
800
400
Forward current transfer ratio h
0
1 10 100 10003 30 300
Collector current IC (mA
30
15
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
2
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