Panasonic 2SD2565 Datasheet

Transistor

2SD2565

Silicon NPN triple diffusion planer type

For high voltage-withstand switching

Features

■

●

High collector to base voltage V

●

High collector to emitter voltage V

●

Large collector power dissipation PC.

●

Low collector to emitter saturation voltage V

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*1

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

*1

CBO

CEO

.

.

Ratings

400
400

5
1

0.5
1

150

–55 ~ +150

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time

Symbol

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

t

stg

t

f

Conditions

IC = 100µA, IE = 0
IC = 500µA, IB = 0
IE = 100µA, IC = 0
VCE = 5V, IC = 30mA
IC = 250mA, IB = 50mA
IC = 250mA, IB = 50mA

*

*

VCB = 30V, IE = –20mA, f = 200MHz
VCB = 30V, IE = 0, f = 1MHz
IC = 100mA
IB1 = 10mA, IB2 = –10mA
VCC = 200V

min

400
400

5

30

typ

max

1.5

1.5

30

6

20

0.8

3.7

0.6

*

Pulse measurement

Unit

V
V
V

–
V
V

MHz

pF

µS
µS
µS

1

Transistor

2SD2565

PC — Ta IC — V

2.0

)
W

(

1.6

C

1.2

0.8

0.4

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

1 10 100 10003 30 300

C

IC/IB=5

25˚C

75˚C

Collector current IC (mA

V

CE

)

300

250

)

mA

(

200

C

150

100

Collector current I

50

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

60

FE

50

40

30

20

10

Forward current transfer ratio h

Ta=75˚C

25˚C

–25˚C

Ta=25˚C

IB=10mA

9mA
8mA
7mA

6mA
5mA

4mA

3mA

2mA

1mA

)

C

VCE=5V

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

1 10 100 10003 30 300

Collector current IC (mA

24

)
pF

(

20

ob

16

12

8

4

— I

CE(sat)

25˚C

Cob — V

C

Ta=75˚C

CB

IC/IB=5

–25˚C

f=1MHz
I

=0

E

Ta=25˚C

)

Collector output capacitance C

0

1 10 100 10003 30 300

)

Collector current IC (mA

)

0

1 3 10 30 100

Collector to base voltage VCB (V

)

2