Panasonic 2SD2556 Datasheet
Power Transistors
2SD2556
Silicon NPN epitaxial planer type
For power switching
■ Features
• High forward current transfer ratio h
• Allowing supply with the radial taping
• Low collector to emitter saturation voltage V
FE
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power
dissipation
TC = 25°CPC10 W
Ta = 25°C1
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
j
stg
130 V
80 V
10 A
150 °C
−55 to +150 °C
: < 0.5 V
CE(sat)
7V
5 A
6.5
±0.1
5.3
±0.1
4.35
±0.1
±0.1
±0.1
1.8
7.3
±0.1
2.5
123
2.3
4.6
±0.1
1: Base
2: Collector
3: Emitter U Type Package
Internal Connection
B
0.75
±0.1
0.8 max.
1.0
±0.1
0.1
±0.1
E
0.5
±0.05
2.3
±0.1
(5.3)
(4.35)
(3.0)
C
±0.1
Unit: mm
0.5
±0.1
±0.2
1.0
(1.8)
(5.5)
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Collector to emitter voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V
Transition frequency f
Turn-on time t
Storage time t
Fall time t
Note)*: Rank classification
Rank P Q
h
FE2
130 to 260 90 to 180
CBO
EBO
h
CE(sat)IC
BE(sat)IC
VCB = 100 V, IE = 010µA
VEB = 5 V, IC = 050µA
IC = 1 mA, IB = 080V
CEO
FE1
FE2
VCE = 2 V, IC = 0.1 A 45
*VCE = 2 V, IC = 2 A 90 260
= 4 A, IB = 0.2 A 0.5 V
= 4 A, IB = 0.2 A 1.5 V
VCE = 10 V, IC = − 0.5 A, f = 10 MHz 30 MHz
T
IC = 2 A, IB1 = 0.2 A, IB2 = − 0.2 A 0.5 µs
on
VCC = 50 V 1.5 µs
stg
f
0.15 µs
1
Loading...