Panasonic 2SD2549 Datasheet

Po wer Transistors

2SD2549

Silicon NPN triple diffusion planar type

For power amplification

Features

■

●

High forward current transfer ratio hFE which has satisfactory
linearity

●

Low collector to emitter saturation voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

80
80

6
5
3

20

2

150

–55 to +150

Unit

V
V
V
A
A

W

˚C
˚C

Unit: mm

9.9±0.3

φ3.2±0.1

15.0±0.513.7±0.2

1.4±0.2

1

1.6±0.2

0.8±0.1

2.54±0.3

23

5.08±0.5

TO–220D Full Pack Package

4.2±0.2

4.6±0.2

2.9±0.2

3.0±0.5

2.6±0.1

0.55±0.15

1:Gate
2:Drain
3:Source

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank Q P

h

FE1

70 to 150 120 to 250

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCE = 70V, VBE = 0
VCE = 70V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

min

80
70
10

typ30max

100
100

1

250

1.8

0.7

0.5

4.5

0.5

Unit

µA
µA

mA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD2549

PC—Ta IC—V

30

)
W

(

25

C

20

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

)

10

V

(

CE(sat)

1

–1

10

–2

10

–3

10

Collector to emitter saturation voltage V

10

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(1)

(2)

(3)

Ambient temperature Ta (˚C

V

CE(sat)—IC

Ta=25˚C

–2

–1

10

110

Collector current IC (A

)

)

CE

8

7

)

6

A

(

C

5

4

IB=100mA

3

2

Collector current I

1

0

012108264

90mA

80mA

50mA

40mA

70mA

60mA

30mA

Collector to emitter voltage VCE (V

hFE—I

C

3

10

FE

2

10

10

Ta=25˚C

Forward current transfer ratio h

1

–2

10

–1

10

110

Collector current IC (A

TC=25˚C

20mA

10mA

)

)
A

(

C

Collector current I

)

)
A

(

C

Collector current I

IC—V

BE

8

7

6

5

4

3

2

1

0

01.21.00.80.2 0.60.4

Ta=25˚C

Base to emitter voltage VBE (V

Area of safe operation (ASO)

30

10

I

CP

3

I

C

1

0.3

0.1

1 30010010330

Collector to emitter voltage VCE (V

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

1s

)

)

R

—t

th(t)

100

)
˚C/W

(
(t)

th

10

1

Thermal resistance R

0.1 1 10 100 1000

Note: Rth was measured at Ta=25˚C and under natural convection.

=10V × 0.2A (2W) and without heat sink

(1) P

T

=10V × 0.8A (8W) and with a 100 × 100 × 2mm Al heat sink

(2) P

T

Time t (s

)

2

(1)

(2)