Panasonic 2SD2544 Datasheet

Po wer Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Features
Satisfactory linearity of foward current transfer ratio h
Allowing supply with the radial taping
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Electrical Characteristics (T
Parameter
Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Symbol
V V V I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
C
Symbol
I
CBO
I
EBO
V
CEO
*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
FE
=25˚C)
C
Ratings
60 60
7 8 4
15
2
150
–55 to +150
=25˚C)
FE
Unit
V V V A A
W
˚C ˚C
Conditions
VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.8A VCE = 2V, IC = 2A IC = 2A, IB = 50mA IC = 2A, IB = 50mA VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 50mA, IB2 = –50mA, VCC = 50V
4.2±0.2
13.0±0.2
18.0±0.5 Solder Dip
C1.0
123
2.5±0.2 2.5±0.2
min
60
500
60
0.65±0.1
1.05±0.10.35±0.1
0.55±0.1
typ
1000
70
0.5
3.6
1.1
2.5±0.2
1.2±0.1
Unit: mm
5.0±0.1
1.010.0±0.2
90°
C1.0
2.25±0.2
0.55±0.1
1:Base 2:Collector 3:Emitter
MT4 Type Package
max
Unit
10 10
µA µA
V
2000
0.5
1.5
V V
MHz
µs µs µs
*
h
Rank classification
FE1
Rank Q P
h
500 to 1200 800 to 2000
FE1
1
Po wer Transistors 2SD2544
PC—Ta IC—V
20
) W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
10
V
(
3
CE(sat)
1
0.3
(1) TC=Ta (2) Without heat sink
(1)
(2)
V
CE(sat)—IC
=2.0W)
(P
C
TC=100˚C
IC/IB=20
CE
8
7
)
6
A
(
C
5
4
3
2
Collector current I
1
0
012108264
)
Collector to emitter voltage VCE (V
10
3
FE
1
0.3
0.1
TC=100˚C
IB=100mA
hFE—I
–25˚C
TC=25˚C
50mA
20mA
10mA
6mA
4mA
2mA
)
C
VCE=5V
25˚C
10
) V
(
BE(sat)
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
1000
)
300
MHz
(
T
100
30
V
BE(sat)—IC
IC/IB=20
3
TC=–25˚C
1
100˚C
25˚C
0.1 0.3 1 3 10
Collector current IC (A
fT—I
C
)
VCE=10V f=10MHz T
=25˚C
C
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
–25˚C
Collector current IC (A
Cob—V
1000
) pF
(
300
ob
100
30
10
3
CB
25˚C
)
IE=0 f=1MHz
=25˚C
T
C
Collector output capacitance C
1
1 3 10 30 100
Collector to base voltage VCB (V
0.03
0.01
Forward current transfer ratio h
0.003
0.001
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
Area of safe operation (ASO)
100
30
)
I
CP
10
A
(
I
C
C
3
DC
1
0.3
0.1
Collector current I
0.03
0.01 1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
10ms
)
Non repetitive pulse T
=25˚C
C
t=1ms
10
3
Transition frequency f
1
0.01 0.1 1 100.03 0.3 3
)
Collector current IC (A
)
2
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