Panasonic 2SD2530 Datasheet
Power Transistors
2SD2530
Silicon NPN triple diffusion planer type Darlington
For power amplification
±0.2
4.2
10.0
±0.2
Unit: mm
5.0
±0.1
1.0
±0.2
■ Features
• High forward current transfer ratio h
• Allowing supply with the radial taping
• Low collector to emitter saturation voltage V
FE
CE(sat)
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power
dissipation
TC = 25°CPC15 W
Ta = 25°C2
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
j
stg
100 V
100 V
5V
10 A
5 A
150 °C
−55 to +150 °C
■ Electrical Characteristics TC = 25°C ± 2°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Collector to emitter voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage V
Base to emitter saturation voltage V
Transition frequency f
Turn-on time t
Storage time t
Fall time t
CBO
I
CEO
EBO
h
CE(sat)IC
BE(sat)IC
CEO
FE1
FE2
T
on
stg
f
VCB = 100 V, IE = 0 100 µA
VCE = 80 V, IB = 0 100 µA
VEB = 5 V, IC = 05mA
IC = 10 mA, IB = 0 100 V
VCE = 4 V, IC = 2 A 2 000 15 000
VCE = 4 V, IC = 4 A 500
= 2 A, IB = 2 mA 1.5 V
IC = 4 A, IB = 16 mA 2.5 V
= 4 A, IB = 16 mA 2.5 V
VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz
IC = 4 A, IB1 = 16 mA, IB2 = −16 mA 0.27 µs
VCC = 50 V 2.9 µs
: < 2.5 V
±0.2
13.0
0.65
±0.1
±0.5
18.0
0.35
Solder Dip
±0.1
2.5
±0.2
0.65
1.05
0.55
2.5
123
Internal Connection
B
90°
±0.1
2.5
1.2
±0.2
±0.1
±0.1
±0.1
1.48
±0.1
±0.2
C 1.0
2.25
0.55
1: Base
2: Collector
3: Emitter
MT-4 Package
C
E
1.0 µs
±0.2
±0.1
1
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