Panasonic 2SD2528 User Manual
Power Transistors
2SD25282SD2528
2SD2528
2SD25282SD2528
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
■ Features
•
High forward current transfer ratio h
•
Satisfactory linearity of forward current transfer ratio h
•
Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Base current I
Collector power
dissipation
Junction temperature T
Storage temperature T
TC = 25°CPC40 W
Ta = 25°C 2.0
FE
CBO
CEO
EBO
CP
C
B
j
−55 to +150 °C
stg
FE
80 V
60 V
6V
10 A
5A
1A
150 °C
±0.5
15.0
±0.2
13.7
±0.2
4.2
Solder Dip
9.9
±0.3
0.8
2.54
5.08
123
1.4
1.6
±0.1
φ 3.2
±0.2
±0.2
±0.30
±0.50
±0.5
3.0
4.6
±0.1
1: Base
2: Collector
3: Emitter
TO-220D Package
Unit: mm
±0.2
2.9
2.6
0.55
±0.15
±0.2
±0.1
■ Electrical Characteristics TC = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Emitter cutoff current I
Collector to emitter voltage V
Forward current transfer ratio
*
Collector to emitter saturation voltage
Transition frequency f
Turn-on time t
Storage time t
Fall time t
Note)*: Rank classification
Rank P Q
h
800 to 2 000 500 to 1 200
FE
V
CBO
EBO
CEO
h
FE
CE(sat)
T
on
stg
f
VCB = 80 V, IE = 0 100 µA
VEB = 6 V, IC = 0 100 µA
IC = 25 mA, IB = 0 60 V
VCE = 4 V, IC = 1 A 500 2 000
IC = 4 A, IB = 0.1 A 0.3 V
VCE = 12 V, IC = 0.4 A, f = 10 MHz 30 MHz
IC = 4 A, IB1 = 0.08 A, IB2 = − 0.08 A, 0.4 µs
VCC = 50 V 2.0 µs
0.6 µs
1
2SD2528
Power Transistors
PC T
a
50
)
W
(
(1)
40
C
30
20
(2)
10
(3)
Collector power dissipation P
(4)
0
0 16040 12080 14020 10060
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
Ambient temperature Ta (˚C
V
I
BE(sat)
)
V
(
BE(sat)
2
10
10
1
C
IC/IB=50
)
IC V
CE
8
7
)
6
A
(
C
IB=10mA
5
4
3
2
Collector current I
1
0
012108264
9mA
6mA
5mA
8mA
7mA
4mA
3mA
Collector to emitter voltage VCE (V
hFE I
4
10
FE
3
10
C
TC=25˚C
2mA
1mA
V
I
)
10
V
(
CE(sat)
1
–1
10
–2
10
–3
10
Collector to emitter saturation voltage V
–1
10
)
300
CE(sat)
110
Collector current IC (A
fT I
C
)
100
MHz
(
T
30
C
)
VCE=12V
f=10MHz
=25˚C
T
C
–1
10
Base to emitter saturation voltage V
–2
10
–1
10
Collector current IC (A
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
110
)
ton, t
, tf I
stg
t
stg
t
f
t
on
C
Pulsed tw=1ms
Duty cycle=1%
=50 (IB1=–IB2)
I
C/IB
=50V
V
CC
=25˚C
T
C
Switching time t
0.03
0.01
082647153
Collector current IC (A
)
2
10
Forward current transfer ratio h
10
–2
10
–1
10
110
Collector current IC (A
Area of safe operation (ASO)
30
I
CP
10
)
A
I
(
C
C
3
1
0.3
Collector current I
0.1
Non repetitive pulse
=25˚C
T
C
1 3 10 30 100
Collector to emitter voltage VCE (V
10ms
1s
)
t=1ms
10
Transition frequency f
3
0.003 0.10.01 0.30.03 1 3
Collector current IC (A
)
)
2
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