Panasonic 2SD2527 Datasheet

Po wer Transistors

2SD2527

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Features

■

●

High foward current transfer ratio h

●

Satisfactory linearity of foward current transfer ratio h

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V
V
V
I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

80
60

6
8
4
1

40

2.0

150

–55 to +150

FE

Unit

V
V
V
A
A
A

W

˚C
˚C

Unit: mm

9.9±0.3

φ3.2±0.1

15.0±0.513.7±0.2

1.4±0.2

1

1.6±0.2

0.8±0.1

2.54±0.3

23

5.08±0.5

TO–220D Full Pack Package

4.2±0.2

4.6±0.2

2.9±0.2

3.0±0.5

2.6±0.1

0.55±0.15

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Storage time

*

hFE Rank classification

Rank Q P

h

500 to 1200 800 to 2000

FE

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

*

h

FE

V

CE(sat)

f

T

t

stg

=25˚C)

Conditions

VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.8A
IC = 3A, IB = 0.075A
VCE = 12V, IC = 0.3A, f = 10MHz
IC = 3A, IB1 = 0.06A, IB2 = – 0.06A, VCC = 50V

min

60

500

typ

30
20

max

100
100
100

2000

0.7

Unit

µA
µA
µA

V

V

MHz

µs

1

Po wer Transistors 2SD2527

IC—V

CE

1.6

1.4

)

1.2

A

(

C

1.0

0.8

0.6

0.4

Collector current I

0.2

0

012108264

IB=1.0mA

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

Collector to emitter voltage VCE (V

hFE—I

C

4

10

FE

3

10

2

10

Forward current transfer ratio h

10

–2

10

–1

10

110

Collector current IC (A

TC=25˚C

0.2mA

0.1mA

VCE=4V

)

5

4

)
A

(

C

3

2

Collector current I

1

0

0 1.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

300

)

100

MHz

(

T

30

10

Transition frequency f

3

0.003 0.10.01 0.30.03 1 3

IC—V

BE

fT—I

C

VCE=12V
f=10MHz
T

Collector current IC (A

=25˚C

C

V

)

10

V

(

CE(sat)

1

–1

10

–2

10

–3

10

Collector to emitter saturation voltage V

10

)

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

CE(sat)—IC

–2

–1

10

Collector current IC (A

ton, t

, tf — I

stg

Pulsed tw=1ms
Duty cycle=1%
I

C/IB

V
T

t

stg

t

f

t

on

IC/IB=40

110

)

C

=40 (IB1=–IB2)

=50V

CC

=25˚C

C

Switching time t

0.03

0.01
08264

)

Collector current IC (A

)

Area of safe operation (ASO)

10ms

1s

Non repetitive pulse
T

=25˚C

C

t=1ms

30

)

I

10

CP

A

(

I

C

C

3

1

0.3

Collector current I

0.1

Collector to emitter voltage VCE (V

2

30010010330

)