Panasonic 2SD2486 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

2SD2486

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Features

■

●

High forward current transfer ratio hFE which has satisfactory
linearity

●

Low collector to emitter saturation voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

I

BP

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

60
60

7
8
4
2

25

2

150

–55 to +150

Unit

V
V
V
A
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

Rank classification

FE1

Rank Q R

h

500 to 1200 800 to 2000

FE1

*

h

C

Symbol

I

CBO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 60V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.8A
VCE = 2V, IC = 2A
IC = 2A, IB = 50mA
IC = 2A, IB = 50mA
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 2A, IB1 = 50mA, IB2 = –50mA,
VCC = 50V

min

60

500

60

typ

1000

70

0.5

3.6

1.1

max

10
10

2000

0.5

1.5

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD2486

PC—Ta IC—V

30

)

(1)

W

(

25

C

20

15

(2)

10

(3)

5

(4)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

TC=–25˚C

1

100˚C

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

V

BE(sat)—IC

25˚C

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

IC/IB=40

)

CE

3.0
IB=5.0mA

4.0mA

2.5

)
A

(

2.0

C

1.5

1.0

3.0mA

2.5mA

Collector current I

0.5

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

100000

30000

FE

10000

3000

TC=100˚C

1000

300

100

Forward current transfer ratio h

30

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

25˚C

–25˚C

2.0mA

1.5mA

C

T

1.0mA

0.5mA

=25˚C

C

VCE=2V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=10V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=40

–25˚C

)

=25˚C

)

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
054132

Collector current IC (A

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=40 (IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

Area of safe operation (ASO)

100

30

)

I

CP

10

A

(

I

C

C

t

stg

t

f

t

on

)

3

10ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

)