Panasonic 2SD2469 Datasheet

Po wer Transistors

2SD2469, 2SD2469A

Silicon NPN epitaxial planar type

For power switching
Complementary to 2SB1607

Unit: mm

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory linearity of foward current transfer ratio h

●

Large collector current I

●

Full-pack package with outstanding insulation, which can be in-

C

CE(sat)

stalled to the heat sink with one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD2469
2SD2469A
2SD2469

2SD2469A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Symbol

V

V

V
I

CP

I

C

P

C

T

j

T

stg

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage

2SD2469
2SD2469A

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

CBO

CEO

EBO

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

C

Ratings

130
150

80

100

7

15

7

40

2

150

–55 to +150

=25˚C)

VCB = 100V, IE = 0
VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
IC = 5A, IB = 0.25A
IC = 5A, IB = 0.25A
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 3A, IB1 = 0.3A, IB2 = – 0.3A,
VCC = 50V

FE

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

φ3.2±0.1

15.0±0.313.7

–0.2

+0.5

4.1±0.2

8.0±0.2

Solder Dip

7°

min

100

9.9±0.3

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

231

TO–220E Full Pack Package

typ

80

45
90

30

0.5

1.5

0.1

4.6±0.2

max

10
50

260

0.5

1.5

2.9±0.2

2.6±0.1

0.7±0.1

1:Base
2:Collector
3:Emitter

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

*

h

Rank classification

FE2

Rank Q P

h

FE2

90 to 180 130 to 260

1

Po wer Transistors 2SD2469, 2SD2469A

PC—Ta IC—V

50

)
W

(

(1)

40

C

30

20

(2)

10

(3)

Collector power dissipation P

(4)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

C

V

CE(sat)—IC

TC=100˚C
25˚C

Collector current IC (A

)

IC/IB=20

–25˚C

)

CE

10

8

)
A

(

C

6

4

Collector current I

2

0

012108264

TC=25˚C

IB=55mA

50mA
45mA

40mA

35mA

30mA

15mA
10mA

5mA

20mA

Collector to emitter voltage VCE (V

V

BE(sat)—IC

)
V

(

10

BE(sat)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.1 301010.3 3

Collector current IC (A

(1) IC/IB=10

=20

(2) I

C/IB

T

=25˚C

C

)

V

)
V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 310.10.03 0.3

)

100

)
V

(

30

BE(sat)

10

(1)
(2)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

CE(sat)—IC

(1) IC/IB=10
(2) I
T

=25˚C

C

Collector current IC (A

V

BE(sat)—IC

TC=–25˚C

100˚C

25˚C

Collector current IC (A

=20

C/IB

(2)

(1)

)

IC/IB=20

)

hFE—I

10000

3000

FE

1000

300

TC=100˚C

25˚C

100

Forward current transfer ratio h

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

2

C

VCE=2V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

)

fT—I

C

VCE=10V
f=10MHz
T

C

Collector current IC (A

=25˚C

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

)

Cob—V

0.1 1 10 1000.3 3 30

CB

IE=0
f=1MHz

=25˚C

T

C

Collector to base voltage VCB (V

)