Panasonic 2SD2467 Datasheet

Po wer Transistors
2SD2467
Silicon NPN epitaxial planar type
For power switching
Features
Satisfactory linearity of foward current transfer ratio h
Large collector current I
Full-pack package with outstanding insulation, which can be in-
C
stalled to the heat sink with one screw
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
130
80
7 6 3
30
2
150
–55 to +150
FE
Unit
W
˚C ˚C
Unit: mm
4.6±0.2
15.0±0.313.7
–0.2
8.0±0.2
4.1±0.2
Solder Dip
7°
9.9±0.3
3.0±0.2
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
231
φ3.2±0.1
+0.5
V V V A A
TO–220E Full Pack Package
2.9±0.2
2.6±0.1
0.7±0.1
1:Base 2:Collector 3:Emitter
Electrical Characteristics (T
Parameter
Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 10V, IC = 0.5A, f = 10MHz
IC = 0.5A, IB1 = 50mA, IB2 = –50mA, VCC = 50V
min
80 45 90
typ
30
0.5
2.5
0.15
max
10 50
260
0.5
1.5
Unit
µA µA
V
V V
MHz
µs µs µs
1
Po wer Transistors 2SD2467
PC—Ta IC—V
50
) W
(
40
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
100
) V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.0.1
0.01 0.1 1 100.03 0.3 3
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
(1)
(2)
(3) (4)
C
Ambient temperature Ta (˚C
V
BE(sat)—IC
IC/IB=20
25˚C
TC=–25˚C
100˚C
Collector current IC (A
)
CE
5
4
) A
(
C
3
2
Collector current I
1
0
012108264
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
300
TC=100˚C 25˚C
100
Forward current transfer ratio h
–25˚C
30
10
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
C
TC=25˚C
IB=100mA
50mA
30mA 25mA
20mA 10mA
5mA 2mA
1mA
VCE=2V
)
)
100
V
(
30
CE(sat)
10
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
10000
3000
) MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
3
1
0.01 0.1 1 100.03 0.3 3
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=10V f=10MHz T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=20
–25˚C
)
=25˚C
)
Cob—V
10000
) pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
0.1 1 10 1000.3 3 30
Collector to base voltage VCB (V
2
CB
IE=0 f=1MHz
=25˚C
T
C
)
ton, t
100
30
) µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01 0 2.01.60.4 1.20.8
Collector current IC (A
, tf — I
stg
C
Pulsed tw=1ms Duty cycle=1%
=10 (IB1=–IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
Area of safe operation (ASO)
100
30
)
10
A
I
(
CP
C
I
C
3
t
stg
t
on
t
f
)
1
0.3
0.1
Collector current I
0.03
0.01 1 10 100 10003 30 300
Collector to emitter voltage VCE (V
10ms
1ms
Non repetitive pulse
=25˚C
T
C
t=0.5ms
DC
)
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