Panasonic 2SD2467 Datasheet

Po wer Transistors

2SD2467

Silicon NPN epitaxial planar type

For power switching

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory linearity of foward current transfer ratio h

●

Large collector current I

●

Full-pack package with outstanding insulation, which can be in-

C

stalled to the heat sink with one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

130

80

7
6
3

30

2

150

–55 to +150

FE

Unit

W

˚C
˚C

Unit: mm

4.6±0.2

15.0±0.313.7

–0.2

8.0±0.2

4.1±0.2

Solder Dip

7°

9.9±0.3

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

231

φ3.2±0.1

+0.5

V
V
V
A
A

TO–220E Full Pack Package

2.9±0.2

2.6±0.1

0.7±0.1

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

90 to 180 130 to 260

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 0.5A
IC = 2A, IB = 0.1A
IC = 2A, IB = 0.1A
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 0.5A, IB1 = 50mA, IB2 = –50mA,
VCC = 50V

min

80
45
90

typ

30

0.5

2.5

0.15

max

10
50

260

0.5

1.5

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD2467

PC—Ta IC—V

50

)
W

(

40

C

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.0.1

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

=2W)

(1)

(2)

(3)
(4)

C

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=20

25˚C

TC=–25˚C

100˚C

Collector current IC (A

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

10000

3000

FE

1000

300

TC=100˚C
25˚C

100

Forward current transfer ratio h

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

C

TC=25˚C

IB=100mA

50mA

30mA
25mA

20mA
10mA

5mA
2mA

1mA

VCE=2V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=10V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=20

–25˚C

)

=25˚C

)

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

ton, t

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
0 2.01.60.4 1.20.8

Collector current IC (A

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

Area of safe operation (ASO)

100

30

)

10

A

I

(

CP

C

I

C

3

t

stg

t

on

t

f

)

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

10ms

1ms

Non repetitive pulse

=25˚C

T

C

t=0.5ms

DC

)