Panasonic 2SD2466 Datasheet

Po wer Transistors

2SD2466, 2SD2466A

Silicon NPN epitaxial planar type

For low-voltage switching
Complementary to 2SB1604

Features

■

●

Low collector to emitter saturation voltage V

●

High-speed switching

●

Full-pack package with outstanding insulation, which can be in­stalled to the heat sink with one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD2466
2SD2466A
2SD2466

2SD2466A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

40
50
20
40

5
20
10
40

2

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

φ3.2±0.1

15.0±0.313.7

–0.2

+0.5

4.1±0.2

8.0±0.2

Solder Dip

7°

9.9±0.3

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

231

TO–220E Full Pack Package

Unit: mm

4.6±0.2

2.9±0.2

2.6±0.1

0.7±0.1

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD2466

2SD2466A
Emitter cutoff current
Collector to emitter
voltage

2SD2466

2SD2466A

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

90 to 180 130 to 260

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 40V, IE = 0
VCB = 50V, IE = 0
VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
IC = 10A, IB = 0.33A
IC = 10A, IB = 0.33A
VCE = 10V, IC = 0.5A, f = 10MHz
VCB = 10V, IE = 0, f = 1MHz

IC = 3A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 20V

min

20
40
45
90

typ

120
200

0.3

0.4

0.1

max

50
50
50

260

0.6

1.5

Unit

µA

µA

V

V
V

MHz

pF

µs
µs
µs

1

Po wer Transistors 2SD2466, 2SD2466A

PC—Ta IC—V

80

)

70

W

(

C

60

50

40

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

)
V

(

10

BE(sat)

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.1 301010.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=2.0W)

(P

C

(1)

(2)

(3)

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=20

25˚C

–25˚C

TC=100˚C

Collector current IC (A

)

CE

10

IB=100mA

8

)
A

(

C

6

4

Collector current I

2

0

0654132

)

Collector to emitter voltage VCE (V

90mA

hFE—I

1000

FE

300

TC=100˚C

25˚C

100

–25˚C

30

10

3

Forward current transfer ratio h

1

0.1 301010.3 3

Collector current IC (A

TC=25˚C

80mA

70mA

60mA

50mA
40mA

30mA

20mA

10mA

C

VCE=10V

)

)
V

(

10

CE(sat)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

300

)
MHz

100

(

T

30

10

Transition frequency f

0.3

0.1

V

CE(sat)—IC

3

1

0.1 301010.3 3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=10V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=20

–25˚C

)

=25˚C

)

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
054132

Collector current IC (A

2

ton, t

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=30 (IB1=–IB2)

I

C/IB

=20V

V

CC

T

=25˚C

C

t
t

t

Area of safe operation (ASO)

100

30

I

CP

I

)

C

10

A

(

C

on
stg

f

Collector current I

0.03

0.01

)

DC

3

1

0.3

0.1

1 10 100 10003 30 300

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

t=10ms

1ms

2SD2466

2SD2466A

)