Panasonic 2SD2465 Datasheet

Po wer Transistors

2SD2465, 2SD2465A

Silicon NPN epitaxial planar type

For low-voltage switching
Complementary to 2SB1603

Features

■

●

Low collector to emitter saturation voltage V

●

High-speed switching

●

Full-pack package superior in insulation, which can be installed
to the heat sink with one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD2465
2SD2465A
2SD2465

2SD2465A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

40
50
20
40

5
8
4

25

2

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

φ3.2±0.1

15.0±0.313.7

–0.2

+0.5

4.1±0.2

8.0±0.2

Solder Dip

7°

9.9±0.3

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

231

TO–220E Full Pack Package

Unit: mm

4.6±0.2

2.9±0.2

2.6±0.1

0.7±0.1

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD2465

2SD2465A
Emitter cutoff current
Collector to emitter
voltage

2SD2465

2SD2465A

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

90 to 180 130 to 260

C

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 40V, IE = 0
VCB = 50V, IE = 0
VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1A
IC = 2A, IB = 0.1A
IC = 2A, IB = 0.1A
VCE = 5V, IC = 0.5A, f = 10MHz

IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 20V

min

20
40
45
90

typ

120

0.2

0.5

0.1

max

50
50
50

260

0.5

1.5

Unit

µA

µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD2465, 2SD2465A

PC—Ta IC—V

40

)

35

W

(

C

30

25

20

15

10

5

Collector power dissipation P

0

0 15012510025 7550

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(P

(1)

(2)

(3)
(4)

=2.0W)

C

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=10

TC=–25˚C

25˚C

100˚C

Collector current IC (A

)

CE

6

5

)
A

(

4

C

3

2

IB=60mA

50mA

40mA

30mA

20mA

T

C

10mA

=25˚C

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

10000

3000

FE

1000

TC=100˚C

300

100

30

10

Forward current transfer ratio h

3

1

0.1 1 10 1000.3 3 30

25˚C

–25˚C

Collector current IC (A

5mA

C

VCE=2V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

Collector current IC (A

fT—I

C

VCE=5V
f=10MHz
T

C

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IC/IB=10

–25˚C

)

=25˚C

)

10

)

3

µs

(

f

,t

1

stg

,t

on

0.3

0.1

Switching time t

0.03

0.01
082647153

Collector current IC (A

2

t

t
t

stg

on

f

ton, t

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

=20V

V

CC

=25˚C

T

C

Area of safe operation (ASO)

100

30

)

I

CP

10

A

(

I

C

C

3

10ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

t=1ms

DC

2SD2465

Non repetitive pulse

=25˚C

T

C

2SD2465A

)