Panasonic 2SD2460 Datasheet
Transistor
2SD2460
Silicon NPN epitaxial planer type
For low-frequency output amplification
Features
■
●
High foward current transfer ratio hFE.
●
Low collector to emitter saturation voltage V
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–55 ~ +150
20
20
15
1.5
0.7
300
150
CE(sat)
Unit: mm
4.0±0.2
3.0±0.215.6±0.5
.
Unit
V
V
V
A
A
mW
˚C
˚C
marking
123
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
1.271.27
0.1
+0.2
–
0.45
2.54±0.15
0.7±0.1
2.0±0.2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
VCB = 15V, IE = 0
VCE = 15V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
IC = 500mA, IB = 50mA
*
*
VCB = 20V, IE = –20mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
20
20
15
1000
typ
max
2500
0.15
0.4
55
10
*
Pulse measurement
Unit
1
µA
10
µA
V
V
V
V
MHz
15
pF
1
Transistor
2SD2460
PC — Ta IC — V
500
)
mW
(
400
C
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
hFE — I
C
2400
2100
FE
1800
1500
1200
Ta=75˚C
25˚C
–25˚C
VCE=10V
V
CE
)
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
012108264
)
Collector to emitter voltage VCE (V
Cob — V
24
)
pF
(
20
ob
16
12
CB
Ta=25˚C
IB=100µA
90µA
80µA
70µA
60µA
50µA
40µA
30µA
20µA
10µA
f=1MHz
I
=0
E
Ta=25˚C
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
1 10 100 10003 30 300
Collector current IC (mA
CE(sat)
25˚C
— I
Ta=75˚C
C
IC/IB=10
–25˚C
)
900
600
Forward current transfer ratio h
300
0
1 10 100 10003 30 300
Collector current IC (mA
8
4
Collector output capacitance C
0
1 3 10 30 100
)
Collector to base voltage VCB (V
)
2
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