Panasonic 2SD2457 Datasheet

Transistor

2SD2457

Silicon NPN epitaxial planer type

For low-frequency power amplification

Features

■

●

High collector to emitter voltage V

●

Large collector power dissipation PC.

●

Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

50
40

5
3

1.5
1

150

Unit

V
V
V
A

A
W
˚C
˚C

4.5±0.1

1.6±0.2

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

1.5±0.1

–0.20

+0.25

0.4max.1.0

4.0

–0.2

+0.1

Marking symbol : 1Y

Unit: mm

2.5±0.1

0.4±0.04

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

hFE Rank classification

Symbol

I

CBO

I

CEO

I

EBO

V

CBO

V

CEO

h

FE

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank Q R

h

FE

80 ~ 160 120 ~ 220

Conditions

VCB = 20V, IE = 0
VCE = 10V, IB = 0
VEB = 5V, IE = 0
IC = 1mA, IE = 0
IC = 2mA, IB = 0

*1

VCE = 5V, IC = 1A
IC = 1.5A, IB = 0.15A
IC = 2A, IB = 0.2A

*2

*2

*2

VCB = 5V, IE = –0.5A*2, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz

min

50
40
80

typ

max

100

10

120

220

1.5

150

45

*2

Pulse measurement

Unit

1

µA
µA
µA

V
V

1

V
V

MHz

pF

1

Transistor

2SD2457

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

C

IC/IB=10

25˚C

75˚C

Collector current IC (A

)

V

CE

)

4.0

3.5

)

3.0

A

(

C

2.5

2.0

1.5

1.0

Collector current I

0.5

0

0108264

)

Collector to emitter voltage VCE (V

hFE — I

300

FE

250

200

Ta=75˚C

150

100

50

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

25˚C

–25˚C

Collector current IC (A

Ta=25˚C

IB=40mA

35mA

30mA

25mA

20mA

15mA
10mA

5mA

)

C

VCE=5V

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

240

)

200

MHz

(

T

160

120

80

40

Transition frequency f

0

– 0.01

– 0.03

Emitter current IE (A

— I

CE(sat)

25˚C

C

IC/IB=10

Ta=75˚C

–25˚C

)

fT — I

E

VCB=5V
Ta=25˚C

– 0.1 –1 –10

– 0.3 –3

)

)
pF

(

Cob — V

120

100

ob

80

60

40

20

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)