Panasonic 2SD2441 Datasheet

Transistor

2SD2441

Silicon NPN epitaxial planer type

For low-frequency output amplification

Features

■

●

Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

10
10

7
2

1.5
1

150

–55 ~ +150

Unit

V
V
V
A

A
W
˚C
˚C

4.5±0.1

1.6±0.2

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

1.5±0.1

–0.20

+0.25

0.4max.1.0

4.0

–0.2

+0.1

Marking symbol : 1V

Unit: mm

2.5±0.1

0.4±0.04

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Forward voltage

*1

Applicable to the built-in diode.

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

V

F

Conditions

VCB = 7V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 1V, IC = 400mA
IC = 1A, IB = 25mA

*2

*2

VCB = 60V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

*1

IF = 500mA

min

10
10

7

200

typ

max

700

0.17

0.25

190

50

*2

Pulse measurement

1.3

Unit

1

µA

V
V
V

V

MHz

pF

V

1

Transistor

2SD2441

PC — Ta IC — V

1.4

)
W

1.2

(

C

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

CE(sat)

25˚C

C

IC/IB=50

Ta=75˚C

–25˚C

Collector current IC (A

)

)

CE

1.2

1.0

)
W

(

0.8

C

0.6

0.4

IB=3.0mA

Collector current I

0.2

0

012108264

Collector to emitter voltage VCE (V

hFE — I

C

600

FE

500

Ta=75˚C

400

300

200

100

Forward current transfer ratio h

25˚C

–25˚C

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Ta=25˚C

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

=1V

V

CE

)

2.4

2.0

)
A

(

1.6

C

1.2

0.8

Collector current I

0.4

0

01.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

–1 –3 –10 –30 –100

IC — V

BE

VCE=1V

25˚C

Ta=75˚C

fT — I

E

–25˚C

VCB=6V
f=200MHz
Ta=25˚C

Emitter current IE (mA

)

)

)
pF

(

Cob — V

120

100

ob

80

60

40

20

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=200MHz
Ta=25˚C

)