Panasonic 2SD2416 Datasheet

Transistor

2SD2416

Silicon NPN epitaxial planer type darlington

For low-frequency amplification

Features

■

●

High foward current transfer ratio hFE.

●

60V zener diode built in between collector and base.

●

Darlington connection.

●

Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the maga­zine packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

+25

60

–10
+25

60

–10

5

1.5
1
1

150

–55 ~ +150

Unit

V
V
V
A

A
W
˚C
˚C

4.5±0.1

1.6±0.2

2.6±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package

1.5±0.1

–0.20

+0.25

0.4max.1.0

4.0

–0.2

+0.1

Marking symbol : 1T
Internal Connection

C

B

Unit: mm

2.5±0.1

0.4±0.04

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

h

FE

V

CE(sat)

V

BE(sat)

f

T

Conditions

VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
VCE = 10V, IC = 1.0A
IC = 1.0A, IB = 1.0mA
IC = 1.0A, IB = 1.0mA

*

*

*

VCB = 10V, IE = –50mA, f = 200MHz

min

50
50

6500

E

typ

max

85
85

40000

1.8

2.2

150

*2

Pulse measurement

Unit

1

µA

2

mA

V
V

V
V

MHz

1

Transistor

2SD2416

PC — Ta IC — V

1.4

)
W

1.2

(

C

1.0

0.8

0.6

0.4

0.2

Collector power dissipation P

0

1000

)
V

(

300

BE(sat)

100

30

10

3

1

0.3

Base to emitter saturation voltage V

0.1

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

C

IC/IB=1000

25˚C

100˚C

Collector current IC (A

)

V

CE

2.4

2.0

)
A

(

1.6

C

1.2

0.8

=10V

V

CE

Ta=25˚C

IB=100µA

90µA
80µA
70µA
60µA

50µA
40µA

Collector current I

0.4

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

6

10

FE

5

10

Ta=100˚C

25˚C

4

10

3

10

–25˚C

30µA

C

VCE=10V

Forward current transfer ratio h

2

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

)

1000

V

(

300

CE(sat)

100

30

10

3

1

0.3

0.1

Collector to emitter saturation voltage V

0.01 0.1 1 10.03 0.3 3

)

Collector current IC (A

24

)
pF

(

20

ob

16

12

8

4

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

— I

CE(sat)

25˚C

Ta=100˚C

–25˚C

Cob — V

CB

C

IC/IB=1000

)

f=1MHz
I

=0

E

Ta=25˚C

)

2