Panasonic 2SD2375 Datasheet

Po wer Transistors

2SD2375

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Features

■

●

High forward current transfer ratio hFE which has satisfactory
linearity

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

I

B

P

C

T

j

T

stg

=25˚C)

C

Ratings

80
60

6
6
3
1

25

2

150

–55 to +150

Unit

V
V
V
A
A
A

W

˚C
˚C

15.0±0.513.7±0.2

4.2±0.2

9.9±0.3

1

23

Unit: mm

4.6±0.2

2.9±0.2

3.0±0.5

φ3.2±0.1

1.4±0.2

1.6±0.2

0.8±0.1

2.54±0.3

5.08±0.5

TO–220D Full Pack Package

2.6±0.1

0.55±0.15

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

*

hFE Rank classification

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

*

h

FE

V

CE(sat)

f

T

=25˚C)

Conditions

VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz

min

60

500

Rank Q P

h

FE

500 to 1000 800 to 1500

Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.

typ

50

max

100
100
100

1500

1

Unit

µA
µA
µA

V

V

MHz

1

Po wer Transistors 2SD2375

PC—Ta IC—V

40

)

36

W

(

32

C

28

(1)

24

20

16

12

8

4

Collector power dissipation P

(2)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

(1) TC=Ta
(2) Without heat sink

V

CE(sat)—IC

=2W)

(P

C

IC/IB=40

=25˚C

T

C

CE

1.0

0.8

)
A

(

C

0.6

0.4

Collector current I

0.2

0

012108264

)

Collector to emitter voltage VCE (V

IB=1.0mA

hFE—I

10000

3000

FE

1000

300

TC=25˚C

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

)

C

VCE=4V

=25˚C

T

C

5

4

)
A

(

C

3

2

Collector current I

1

0

01.21.00.80.2 0.60.4

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

IC—V

fT—I

BE

C

VCE=5V
T

=25˚C

C

VCE=12V
f=10MHz
T

=25˚C

C

)

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Area of safe operation (ASO) R

100

30

)

10

A

I

(

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

Non repetitive pulse

=25˚C

T

C

t=1ms

10ms

DC

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

)

—t

th(t)

(1) Without heat sink
(2) With a 100 × 80 × 2mm Al heat sink

Collector current IC (A

(1)

(2)

)

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

2

–2

10

–4

10

)

–3

–2

10

–1

10

110

Time t (s

1010

)

2

10

3

4

10