Panasonic 2SD2374A, 2SD2374 Datasheet

Po wer Transistors

2SD2374, 2SD2374A

Silicon NPN triple diffusion planar type

For power amplification
Complementary to 2SB1548 and 2SB1548A

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Low collector to emitter saturation voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD2374
2SD2374A
2SD2374

2SD2374A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

60
80
60
80

6
5
3

25

2

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

Unit: mm

9.9±0.3

φ3.2±0.1

15.0±0.513.7±0.2

1.4±0.2

1

1.6±0.2

0.8±0.1

2.54±0.3

23

5.08±0.5

TO–220D Full Pack Package

4.2±0.2

4.6±0.2

2.9±0.2

3.0±0.5

2.6±0.1

0.55±0.15

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Emitter cutoff
current

2SD2374
2SD2374A
2SD2374

2SD2374A
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank Q P

h

FE1

70 to 150 120 to 250

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 10V, IC = 0.5A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

min

60
70
10

typ

30

0.5

2.5

0.4

max

200
200
300
300

1

250

1.8

1.2

Unit

µA

µA

mA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD2374, 2SD2374A

PC—Ta IC—V

40

)

36

W

(

32

C

28

(1)

24

20

16

12

8

4

Collector power dissipation P

(2)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

10

V

(

3

CE(sat)

1

0.3

0.1

(1) TC=Ta
(2) Without heat sink

V

CE(sat)—IC

=2W)

(P

C

IC/IB=8

=25˚C

T

C

CE

6

5

)
A

(

4

C

3

2

60mA

T

=25˚C

C

IB=100mA
90mA

80mA

70mA
50mA
40mA

30mA
20mA

10mA

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

100

VCE=4V
T

=25˚C

C

)

8

7

)

6

A

(

C

5

4

3

2

Collector current I

1

0

01.21.00.80.2 0.60.4

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

IC—V

fT—I

BE

C

VCE=4V

=25˚C

T

C

VCE=10V
f=10MHz
T

=25˚C

C

)

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Area of safe operation (ASO) R

100

30

)

10

A

(

I

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse
T

C

t=1ms

1s

=25˚C

10ms

2SD2374

2SD2374A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

–2

10

)

–1

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

—t

th(t)

(1) Without heat sink
(2) With a 100 × 80 × 2mm Al heat sink

Ta=25˚C

(1)

(2)

3

1010

110

Time t (s

)

2

10

)

4

10

2