Panasonic 2SD2358 Datasheet
Transistors
2SD2358
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1538
■ Features
• Low collector to emitter saturation voltage
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation
Junction temperature T
Storage temperature T
Note)*: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
CBO
CEO
EBO
CP
C
*
P
C
j
stg
V
: < 0.15 V
CE(sat)
10 V
10 V
5V
1.2 A
1A
1W
150 °C
−55 to +150 °C
6.9±0.1
4.00.7 0.8
0.15
0.65 max.
+0.1
0.45
−0.05
2.5±0.5 2.5±0.5
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1.2±0.1
+
0.1
0.45
−
0.05
1.05
±0.05 (1.45)
0.21.01.0
+0.1
−0.05
321
0.45
1: Emitter
2: Collector
3: Base
MT2 Type Package
0.65
max.
Unit: mm
2.5±0.1
0.5
4.5±0.114.5±0.5
2.5±0.1
(HW Type)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
CBO
CBO
CEO
EBO
CE(sat)IC
VCB = 7 V, IE = 01µA
IC = 10 µA, IE = 010V
IC = 1 mA, IB = 010V
IE = 10 µA, IC = 05V
VCE = 2 V, IC = 100 mA 200 800
FE
= 500 mA, IB = 20 mA 0.15 V
VCB = 5 V, IE = −50 mA, f = 200 MHz 120 MHz
T
VCB = 20 V, IE = 0, f = 1 MHz 30 pF
ob
1
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