Panasonic 2SD2358 Datasheet

Transistors

2SD2358

Silicon NPN epitaxial planer type

For low-frequency output amplification

Complementary to 2SB1538

■ Features

• Low collector to emitter saturation voltage

• Allowing supply with the radial taping

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Peak collector current I Collector current I Collector power dissipation Junction temperature T Storage temperature T

Note)*: Printed circuit board: Copper foil area of 1 cm2 or more, and the

board thickness of 1.7 mm for the collector portion

CBO

CEO

EBO

stg

: < 0.15 V

CE(sat)

10 V 10 V

1.2 A 1A 1W

150 °C

−55 to +150 °C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

−0.05

2.5±0.5 2.5±0.5

Note) In addition to the

lead type shown in the upper figure, the type as shown in the lower figure is also available.

1.2±0.1

0.1

0.45

−

0.05

1.05 ±0.05 (1.45)

0.21.01.0

+0.1

−0.05

321

0.45

1: Emitter 2: Collector 3: Base MT2 Type Package

0.65 max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW Type)

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Forward current transfer ratio h Collector to emitter saturation voltage V Transition frequency f Collector output capacitance C

CBO

CEO

EBO

CE(sat)IC

VCB = 7 V, IE = 01µA IC = 10 µA, IE = 010V IC = 1 mA, IB = 010V IE = 10 µA, IC = 05V VCE = 2 V, IC = 100 mA 200 800

= 500 mA, IB = 20 mA 0.15 V

VCB = 5 V, IE = −50 mA, f = 200 MHz 120 MHz

VCB = 20 V, IE = 0, f = 1 MHz 30 pF