Panasonic 2SD2321 Datasheet

Transistor

2SD2321

Silicon NPN epitaxial planer type

For low-frequency power amplification

Features

■

●

Low collector to emitter saturation voltage V

●

Satisfactory operation performances at high efficiency with the
low-voltage power supply.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

Ratings

40
20

400
150

–55 ~ +150

7
5
8

CE(sat)

.

Unit

V
V
V
A
A

mW

˚C
˚C

4.0±0.2

3.0±0.215.6±0.5

marking

123

1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package

1.271.27

0.1

+0.2

–

0.45

2.54±0.15

0.7±0.1

Unit: mm

2.0±0.2

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

f

T

C

ob

Rank Q R

h

FE1

230 ~ 380 340 ~ 600

Conditions

VCB = 10V, IE = 0
VCE = 10V, IB = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*1

VCE = 2V, IC = 0.5A
VCE = 2V, IC = 2A
IC = 3A, IB = 0.1A

*2

*2

*2

VCB = 6V, IE = –50mA, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz

min

20

7
230
150

typ

max

600

0.28
150

26

*2

Pulse measurement

0.1

1.0

0.1

1.0

50

Unit

µA
µA
µA

V
V

V

MHz

pF

1

Transistor

2SD2321

PC — Ta IC — V

500

)
mW

(

400

C

300

200

100

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

— I

CE(sat)

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Ta=75˚C

25˚C

–25˚C

Collector current IC (A

)

C

IC/IB=30

)

CE

2.4

2.0

)
A

(

1.6

C

1.2

0.8

Collector current I

0.4

0

0 2.42.01.60.4 1.20.8

Ta=25˚C

IB=7mA

6mA

5mA
4mA

3mA

2mA

1mA

Collector to emitter voltage VCE (V

V

— I

BE(sat)

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Ta=–25˚C

Collector current IC (A

C

IC/IB=30

25˚C

75˚C

)

IC — V

6

5

)
A

(

C

Ta=75˚C

4

25˚C

3

2

Collector current I

1

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

hFE — I

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Ta=75˚C

25˚C

–25˚C

BE

–25˚C

C

VCE=2V

V

CE

)

)

=2V

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

– 0.01

– 0.1 –1 –10

– 0.03

Emitter current IE (A

2

fT — I

E

– 0.3 –3

VCB=6V
Ta=25˚C

)

)
pF

(

Cob — V

100

80

ob

60

40

20

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

IE=0
f=1MHz
Ta=25˚C

)
A

(

Collector current I

)

Area of safe operation (ASO)

100

30

I

10

CP

C

I

C

3

1

0.3

0.1

0.03

0.01

0.1 1 10 1000.3 3 30

Collector to emitter voltage VCE (V

t=1s

Single pulse
Ta=25˚C

t=10ms

)