Panasonic 2SD2275 Datasheet

Po wer Transistors

2SD2275

Silicon NPN triple diffusion planar type Darlington

For power amplification
Complementary to 2SB1502

Features

■

●

Optimum for 55W HiFi output

●

High foward current transfer ratio hFE: 5000 to 30000

●

Low collector to emitter saturation voltage V

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

=25˚C)

C

Ratings

120
100

5
8
5

60

3.5

150

–55 to +150

CE(sat)

: <2.5V

Unit

W

˚C
˚C

Unit: mm

20.0±0.5

6.010.0

26.0±0.520.0±0.5

1.5

1.5

2.5

Solder Dip

V
V

10.9±0.5

V
A

123

A

φ 3.3±0.2

4.02.0

2.0±0.3

3.0±0.3

1.0±0.2

5.45±0.3

5.0±0.3

3.0

3.0

2.0

1.5

2.7±0.3

0.6±0.2

1:Base
2:Collector
3:Emitter

TOP–3L Package

Internal Connection

B

C

E

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q S P

h

5000 to 15000 7000 to 21000 8000 to 30000

FE2

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCB = 120V, IE = 0
VCE = 100V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 4A
IC = 4A, IB = 4mA
IC = 4A, IB = 4mA
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 4A, IB1 = 4mA, IB2 = –4mA,
VCC = 50V

min

100
2000
5000

typ

20

2.5

3.5

1.0

max

100
100
100

30000

2.5

3.0

Unit

µA
µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD2275

PC—Ta IC—V

80

)

70

W

(

(1)

C

60

50

40

30

20

(2)

10

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=3.5W)

(P

C

V

CE(sat)—IC

IC/IB=1000

TC=100˚C

25˚C

–25˚C

Collector current IC (A

)

)

CE

6

5

)
A

(

4

C

3

2

TC=25˚C

IB=0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

Collector current I

1

0

012108264

Collector to emitter voltage VCE (V

hFE—I

C

100000

30000

FE

10000

3000

TC=100˚C

1000

25˚C

300

–25˚C

100

Forward current transfer ratio h

30

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

0.2mA

0.1mA

VCE=5V

)

V

BE(sat)—IC

100

)
V

(

30

BE(sat)

10

3

TC=–25˚C

1

100˚C

25˚C

0.3

Base to emitter saturation voltage V

0.1

0.1 1 10 1000.3 3 30

)

Collector current IC (A

Cob—V

1000

)
pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

CB

IC/IB=1000

)

IE=0
f=1MHz
T

=25˚C

C

)

100

30

)
µs

(

10

f

,t

stg

3

,t

on

1

0.3

0.1

Switching time t

0.03

0.01
08264

Collector current IC (A

2

ton, t

, tf — I

stg

Pulsed tw=1ms
Duty cycle=1%

=1000 (IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

t

stg

t

on

t

f

C

)

Area of safe operation (ASO)

100

30

)

I

CP

10

A

(

C

I

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

t=1ms

10ms

DC

)