
Po wer Transistors
2SD2266
Silicon NPN triple diffusion planar type
For power switching
Features
■
●
High-speed switching
●
Satisfactory linearity of foward current transfer ratio h
●
Allowing supply with the radial taping
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
CEO
EBO
=25˚C)
C
Ratings
80
60
7
8
4
1
15
2
150
–55 to +150
FE
Unit
W
˚C
˚C
Unit: mm
5.0±0.1
1.010.0±0.2
2.5±0.2
0.65±0.1
1.05±0.10.35±0.1
0.55±0.1
1.2±0.1
90°
C1.0
2.25±0.2
0.55±0.1
4.2±0.2
13.0±0.2
18.0±0.5
V
Solder Dip
V
V
C1.0
123
A
A
A
2.5±0.2 2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE1
I
I
V
h
h
V
V
f
t
t
t
Rank Q P O
h
FE1
70 to 150 120 to 250 160 to 320
=25˚C)
C
Symbol
CBO
EBO
CEO
*
FE1
FE2
BE
CE(sat)
T
on
stg
f
Conditions
VCB = 80V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 4A
VCE = 4V, IC = 4A
IC = 4A, IB = 0.4A
VCE = 12V, IC = 0.2A, f = 10MHz
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
min
60
70
20
typ
80
0.3
1.0
0.2
max
100
100
320
2.0
1.5
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1

Po wer Transistors 2SD2266
PC—Ta IC—V
20
)
W
(
C
15
10
5
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
100
V
(
30
CE(sat)
10
3
1
(1) TC=Ta
(2) Without heat sink
(1)
(2)
V
CE(sat)—IC
(P
=2.0W)
C
TC=100˚C
IC/IB=10
CE
4
)
3
A
(
C
2
1
Collector current I
0
082647153
)
Collector to emitter voltage VCE (V
hFE—I
4
10
FE
3
10
2
10
TC=100˚C
25˚C
IB=40mA
35mA
30mA
25mA
20mA
C
–25˚C
T
=25˚C
C
15mA
10mA
5mA
VCE=4V
)
6
5
)
A
(
4
C
3
2
Collector current I
1
0
04132
1000
)
MHz
100
(
T
10
IC—V
BE
25˚C
TC=–25˚C
VCE=4V
100˚C
Base to emitter voltage VBE (V
fT—I
C
VCE=12V
f=10MHz
T
=25˚C
C
)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
10000
)
pF
(
ob
1000
100
10
25˚C
Cob—V
CB
–25˚C
IE=0
f=1MHz
=25˚C
T
C
)
Collector output capacitance C
1
1 10 100 10003 30 300
Collector to base voltage VCB (V
10
Forward current transfer ratio h
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
ton, t
100
)
µs
(
10
f
,t
stg
)
,t
on
Switching time t
0.01
t
stg
1
t
on
t
0.1
f
082647153
Collector current IC (A
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=10 (IB1=–IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
1
Transition frequency f
0.1
0.01 0.1 1 100.03 0.3 3
)
Collector current IC (A
)
Area of safe operation (ASO)
100
30
)
I
CP
10
A
(
I
C
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=1ms
DC
)
2