Panasonic 2SD2266 Datasheet

Po wer Transistors

2SD2266

Silicon NPN triple diffusion planar type

For power switching

Features

■

●

High-speed switching

●

Satisfactory linearity of foward current transfer ratio h

●

Allowing supply with the radial taping

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V
V
V
I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

CEO

EBO

=25˚C)

C

Ratings

80
60

7
8
4
1

15

2

150

–55 to +150

FE

Unit

W

˚C
˚C

Unit: mm

5.0±0.1

1.010.0±0.2

2.5±0.2

0.65±0.1

1.05±0.10.35±0.1

0.55±0.1

1.2±0.1

90°

C1.0

2.25±0.2

0.55±0.1

4.2±0.2

13.0±0.2

18.0±0.5

V

Solder Dip

V
V

C1.0

123

A
A
A

2.5±0.2 2.5±0.2

1:Base
2:Collector
3:Emitter

MT4 Type Package

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

I
I
V
h
h
V
V
f
t
t
t

Rank Q P O

h

FE1

70 to 150 120 to 250 160 to 320

=25˚C)

C

Symbol

CBO

EBO

CEO

*

FE1

FE2

BE

CE(sat)

T

on

stg

f

Conditions

VCB = 80V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 4A
VCE = 4V, IC = 4A
IC = 4A, IB = 0.4A
VCE = 12V, IC = 0.2A, f = 10MHz

IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V

min

60
70
20

typ

80

0.3

1.0

0.2

max

100
100

320

2.0

1.5

Unit

µA
µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD2266

PC—Ta IC—V

20

)
W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

(1) TC=Ta
(2) Without heat sink

(1)

(2)

V

CE(sat)—IC

(P

=2.0W)

C

TC=100˚C

IC/IB=10

CE

4

)

3

A

(

C

2

1

Collector current I

0

082647153

)

Collector to emitter voltage VCE (V

hFE—I

4

10

FE

3

10

2

10

TC=100˚C

25˚C

IB=40mA

35mA
30mA

25mA

20mA

C

–25˚C

T

=25˚C

C

15mA

10mA

5mA

VCE=4V

)

6

5

)
A

(

4

C

3

2

Collector current I

1

0

04132

1000

)
MHz

100

(

T

10

IC—V

BE

25˚C

TC=–25˚C

VCE=4V

100˚C

Base to emitter voltage VBE (V

fT—I

C

VCE=12V
f=10MHz
T

=25˚C

C

)

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

10000

)
pF

(

ob

1000

100

10

25˚C

Cob—V

CB

–25˚C

IE=0
f=1MHz

=25˚C

T

C

)

Collector output capacitance C

1

1 10 100 10003 30 300

Collector to base voltage VCB (V

10

Forward current transfer ratio h

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

ton, t

100

)
µs

(

10

f

,t

stg

)

,t

on

Switching time t

0.01

t

stg

1

t

on

t

0.1

f

082647153

Collector current IC (A

, tf — I

stg

C

Pulsed tw=1ms
Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

1

Transition frequency f

0.1

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

)

Area of safe operation (ASO)

100

30

)

I

CP

10

A

(

I

C

C

3

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

)

2