Panasonic 2SD2259 Datasheet

Transistor

2SD2259

Silicon NPN epitaxial planer type

For low-frequency amplification

Features

■

●

High foward current transfer ratio hFE.

●

Low collector to emitter saturation voltage V

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

20
20
15

1.5

0.7

150

–55 ~ +150

1

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

Conditions

VCB = 15V, IE = 0
VCE = 15V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA
IC = 500mA, IB = 50mA

*

*

VCB = 20V, IE = –20mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

20
20
15

1000

typ

max

2500

0.15
55
10

*2

Pulse measurement

10

0.4

15

Unit

1

µA
µA

V
V
V

V

MHz

pF

1

Transistor

2SD2259

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0

0 20016040 12080

2

or more, and

Ambient temperature Ta (˚C

V

— I

CE(sat)

3

1

Ta=75˚C

0.01 0.1 1 100.03 0.3 3

25˚C

C

–25˚C

Collector current IC (A

)

IC/IB=10

)

CE

200

160

)
mA

(

C

120

80

Collector current I

40

0

012108264

I

Collector to emitter voltage VCE (V

hFE — I

C

3000

FE

2500

Ta=75˚C

2000

1500

1000

Forward current transfer ratio h

25˚C

–25˚C

500

0

0.01 0.1 1 100.03 0.3 3

VCE=10V

Collector current IC (A

Ta=25˚C

=100µA

B

90µA
80µA

70µA
60µA
50µA
40µA

30µA
20µA

10µA

)

2.4

2.0

)
A

(

1.6

C

1.2

0.8

Collector current I

0.4

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

300

)

250

MHz

(

T

200

150

100

50

Transition frequency f

0

–1 –10 –100 –1000–3 –30 –300

IC — V

BE

VCE=10V

25˚C

Ta=75˚C

fT — I

–25˚C

E

VCB=10V
Ta=25˚C

Emitter current IE (mA

)

)

Cob — V

24

)
pF

(

20

ob

16

12

8

4

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz
Ta=25˚C

)